MMBT2907 ON Semiconductor

PN2907 / MMBT2907 PNP General-Purpose Transistor PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. MMBT2907 PN2907 C E TO-92 SOT-23 B Mark:2B EBC Ordering Information Part Number Top Mark Package Packing Method PN2907BU PN2907 TO-92 3L Bulk MMBT29070-D87Z 2B SOT-23 3L Tape and Reel 1997 Semiconductor Components Industries, LLC. Publication Order Number: PN2907/D October-2017, Rev. 2PN2907 / MMBT2907 PNP General-Purpose Transistor (1),(2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The = 25C unless otherwise noted. absolute maximum ratings are stress ratings only. Values are at T A Symbol Parameter Value Unit V Collector-Emitter Voltage -40 V CEO V Collector-Base Voltage -60 V CBO V Emitter-Base Voltage -5.0 V EBO I Collector Current - Continuous -800 mA C T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations. Thermal Characteristics Values are at T = 25C unless otherwise noted. A Max. Symbol Parameter Unit (3) (4) PN2907 MMBT2907 Total Device Dissipation 625 350 mW P D Derate Above 25C5.02.8mW/C Thermal Resistance, Junction to Case 83.3 C/W R JC Thermal Resistance, Junction to Ambient 200 357 C/W R JA Notes: 3 3. PCB size: FR-4 76 x 114 x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 1.6. inch x 1.6 inch x 0.06 inch. www.onsemi.com 2