X-On Electronics has gained recognition as a prominent supplier of MMBT2907AWT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT2907AWT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT2907AWT1G ON Semiconductor

MMBT2907AWT1G electronic component of ON Semiconductor
MMBT2907AWT1G ON Semiconductor
MMBT2907AWT1G Bipolar Transistors - BJT
MMBT2907AWT1G  Semiconductors

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See Product Specifications
Part No. MMBT2907AWT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 60V 0.6A 3-Pin SC-70 T/R
Datasheet: MMBT2907AWT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0296 ea
Line Total: USD 88.8 
Availability - 98940
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
98940
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.0296
9000 : USD 0.018
27000 : USD 0.0176
51000 : USD 0.0171
102000 : USD 0.0168
150000 : USD 0.0167
252000 : USD 0.0167
501000 : USD 0.0165

212430
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.0269
9000 : USD 0.0183

931
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 10
Multiples : 10
10 : USD 0.059
100 : USD 0.0467
300 : USD 0.0406
3000 : USD 0.0271
6000 : USD 0.0243
9000 : USD 0.0229

2022
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.182
10 : USD 0.1162
50 : USD 0.0756
100 : USD 0.0644
500 : USD 0.0434

212430
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.0269
9000 : USD 0.0183

98940
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.0363
9000 : USD 0.022
27000 : USD 0.0207
51000 : USD 0.0201
102000 : USD 0.0198

32010
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 14085
Multiples : 1
14085 : USD 0.0332

941823
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 14085
Multiples : 1
14085 : USD 0.0332

26190
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 14085
Multiples : 1
14085 : USD 0.0332

15520
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 14085
Multiples : 1
14085 : USD 0.0332

32010
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.0281
9000 : USD 0.0191

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Height
Length
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Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
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We are delighted to provide the MMBT2907AWT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT2907AWT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMBT2907AWT1G is an NPN Bipolar Junction Transistor (BJT) manufactured by ON Semiconductor. This transistor has a PNP configuration, with a maximum voltage of 60V and a maximum current of 0.6A. The device comes in a 3-pin SC-70 package, and is suitable for use in various applications such as switching, linear, interface, logic, and industrial. It is characterized by low noise, wide current gain bandwidth, and relatively low saturation voltage. This device is widely used for general-purpose amplifying applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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