X-On Electronics has gained recognition as a prominent supplier of MMBT2907AWT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT2907AWT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT2907AWT1G ON Semiconductor

MMBT2907AWT1G electronic component of ON Semiconductor
MMBT2907AWT1G ON Semiconductor
MMBT2907AWT1G Bipolar Transistors - BJT
MMBT2907AWT1G  Semiconductors

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See Product Specifications
Part No. MMBT2907AWT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 60V 0.6A 3-Pin SC-70 T/R
Datasheet: MMBT2907AWT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30000: USD 0.0192 ea
Line Total: USD 576 
Availability - 98940
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ: 30000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
98940
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 30000
Multiples : 3000
30000 : USD 0.0192
60000 : USD 0.0186
120000 : USD 0.018
150000 : USD 0.0178
270000 : USD 0.0175
510000 : USD 0.0171
1020000 : USD 0.0169

238620
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0255
9000 : USD 0.0183

1338
Ship by Fri. 31 Jan to Wed. 05 Feb
MOQ : 10
Multiples : 10
10 : USD 0.04
100 : USD 0.0321
300 : USD 0.0282
3000 : USD 0.0246
6000 : USD 0.0221
9000 : USD 0.021

2022
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 1
Multiples : 1
1 : USD 0.168
10 : USD 0.1134
50 : USD 0.0742
100 : USD 0.063
500 : USD 0.0434

2910
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0264
9000 : USD 0.019

98940
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0363
9000 : USD 0.022
27000 : USD 0.0216
51000 : USD 0.0209
102000 : USD 0.0206

238620
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0255
9000 : USD 0.0183

32010
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

26190
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

941823
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

15520
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
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Height
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Continuous Collector Current
Dc Collector/Base Gain Hfe Min
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We are delighted to provide the MMBT2907AWT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT2907AWT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMBT2907AWT1G is an NPN Bipolar Junction Transistor (BJT) manufactured by ON Semiconductor. This transistor has a PNP configuration, with a maximum voltage of 60V and a maximum current of 0.6A. The device comes in a 3-pin SC-70 package, and is suitable for use in various applications such as switching, linear, interface, logic, and industrial. It is characterized by low noise, wide current gain bandwidth, and relatively low saturation voltage. This device is widely used for general-purpose amplifying applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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