MMBT3416LT3G General Purpose Amplifier NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 CollectorEmitter Voltage V 40 Vdc CEO BASE EmitterBase Voltage V 4.0 Vdc EBO Collector Current Continuous I 100 mAdc 2 C EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Total Device Dissipation FR5 Board, P D (Note 1) T = 25C 225 mW A 1 Derate above 25C 1.8 mW/C 2 Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina Substrate, P SOT23 (TO236) D (Note 2) T = 25C 300 mW CASE 318 A Derate above 25C 2.4 mW/C STYLE 6 Thermal Resistance, JunctiontoAmbient R 417 C/W JA Junction and Storage Temperature T , T 55 to +150 C J stg MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. GP M 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1 GP = Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT3416LT3G SOT23 10,000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1998 1 Publication Order Number: June, 2018 Rev. 4 MMBT3416LT3/DMMBT3416LT3G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 40 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B EmitterBase Breakdown Voltage V 4.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E C Collector Cutoff Current I 100 nAdc CBO1 (V = 25 Vdc, I = 0) CB E Emitter Cutoff Current I 100 nAdc EBO (V = 5.0 Vdc, I = 0) EB C ON CHARACTERISTICS DC Current Gain h 75 225 FE (I = 2.0 mAdc, V = 4.5 Vdc) C CE CollectorEmitter Saturation Voltage V 0.3 Vdc CE(sat) (I = 50 mAdc, I = 3.0 mAdc) C B BaseEmitter Saturation Voltage V 0.6 1.3 Vdc BE(sat) (I = 50 mAdc, I = 3.0 mAdc) C B SMALLSIGNAL CHARACTERISTICS Collector Cutoff Current I 15 Adc CBO2 (V = 18 Vdc, T = 100C) CB A SmallSignal Current Gain h 75 FE (I = 2.0 mAdc, V = 4.0 Vdc, f = 1 kHz) C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V + 3.0 V 10 < t < 500 s t 1 1 300 ns +10.9 V 275 275 +10.9 V DUTY CYCLE = 2% DUTY CYCLE = 2% 10 k 10 k 0 - 0.5 V <1.0 ns C < 4.0 pF* C < 4.0 pF S S - 9.1 V 1N916 < 1.0 ns *Total shunt capacitance of test jig and connectors Figure 1. TurnOn Time Figure 2. TurnOff Time www.onsemi.com 2