MMBT4124LT1G General Purpose Transistor NPN Silicon Features www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector Emitter Voltage V 25 Vdc CEO Collector Base Voltage V 30 Vdc CBO 2 Emitter Base Voltage V 5.0 Vdc EBO EMITTER Collector Current Continuous I 200 mAdc C THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit Total Device Dissipation P 1 D FR5 Board (Note 1) T = 25C 225 W A 2 Derate above 25C 1.8 mW/C SOT23 (TO236) Thermal Resistance, JunctiontoAmbient R 556 C/W CASE 318 JA STYLE 6 Total Device Dissipation Alumina P D Substrate (Note 2) T = 25C 300 W A Derate above 25C 2.4 mW/C MARKING DIAGRAM Thermal Resistance, JunctiontoAmbient R 417 C/W JA Junction and Storage Temperature T , T 55 to +150 C J stg ZC M Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ZC = Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping 3000 / Tape & Reel MMBT4124LT1G SOT23 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: October, 2016 Rev. 3 MMBT4124LT1/DMMBT4124LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 3) V 25 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C E Collector Base Breakdown Voltage V 30 Vdc (BR)CBO (I = 10 Adc, I = 0) C E Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I 50 nAdc CBO (V = 20 Vdc, I = 0) CB E Emitter Cutoff Current I 50 nAdc EBO (V = 3.0 Vdc, I = 0) EB C ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 2.0 mAdc, V = 1.0 Vdc) 120 360 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE Collector Emitter Saturation Voltage (Note 3) V 0.3 Vdc CE(sat) (I = 50 mAdc, I = 5.0 mAdc) C B Base Emitter Saturation Voltage (Note 3) V 0.95 Vdc BE(sat) (I = 50 mAdc, I = 5.0 mAdc) C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 300 MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) C CE Input Capacitance C 8.0 pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) EB C CollectorBase Capacitance C 4.0 pF cb (I = 0, V = 5.0 V, f = 1.0 MHz) E CB SmallSignal Current Gain h 120 480 fe (I = 2.0 mAdc, V = 10 Vdc, R = 10 k , f = 1.0 kHz) C CE S Current Gain High Frequency h fe (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 3.0 C CE (I = 2.0 mAdc, V = 10 V, f = 1.0 kHz) 120 480 C CE Noise Figure NF 5.0 dB (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. www.onsemi.com 2