MMBT4401M3T5G NPN Switching Transistor The MMBT4401M3T5G device is a spinoff of our popular SOT 23 threeleaded device. It is designed for general purpose switching applications and is housed in the SOT723 surface mount package. This device is ideal for low power surface mount applications where board space is at a premium. MMBT4401M3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 3) (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 60 Vdc C E (BR)CBO Emitter Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 6.0 Vdc E C (BR)EBO Base Cutoff Current (V = 35 Vdc, V = 0.4 Vdc) I 0.1 Adc CE EB BEV Collector Cutoff Current (V = 35 Vdc, V = 0.4 Vdc) I 0.1 Adc CE EB CEX ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 20 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 40 C CE (I = 10 mAdc, V = 1.0 Vdc) 80 C CE (I = 150 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 500 mAdc, V = 2.0 Vdc) 40 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.4 C B (I = 500 mAdc, I = 50 mAdc) 0.75 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.75 0.95 C B (I = 500 mAdc, I = 50 mAdc) 1.2 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I = 20 mAdc, V = 10 Vdc, f = 100 MHz) f 250 MHz C CE T CollectorBase Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 6.5 pF CB E cb EmitterBase Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 30 pF EB C eb Input Impedance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 15 k C CE ie 4 Voltage Feedback Ratio (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 0.1 8.0 X 10 C CE re Small Signal Current Gain (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 40 500 C CE fe Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 30 mhos C CE oe SWITCHING CHARACTERISTICS Delay Time t 15 d (V = 30 Vdc, V = 2.0 Vdc, CC EB ns I = 150 mAdc, I = 15 mAdc) C B1 Rise Time t 20 r Storage Time t 225 s (V = 30 Vdc, I = 150 mAdc, CC C ns I = I = 15 mAdc) B1 B2 Fall Time t 30 f 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V 1.0 to 100 s, 1.0 to 100 s, 200 200 +16 V DUTY CYCLE 2.0% +16 V DUTY CYCLE 2.0% 0 0 1.0 k -14 V 1.0 k C * < 10 pF - 2.0 V S C * < 10 pF S < 20 ns < 2.0 ns - 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. TurnOn Time Figure 2. TurnOff Time