MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon www.onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 (TO236) Compliant CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTOR Rating Symbol Value Unit 3 CollectorEmitter Voltage V 150 Vdc CEO CollectorBase Voltage V 160 Vdc CBO 1 BASE EmitterBase Voltage V 5.0 Vdc EBO Collector Current Continuous I 500 mAdc C 2 Stresses exceeding those listed in the Maximum Ratings table may damage EMITTER the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 2L M Total Device Dissipation P 225 mW D FR5 Board (Note 1) T = 25C 1 A Derate Above 25C 1.8 mW/C 2L = Specific Device Code Thermal Resistance, R 556 C/W JA M = Date Code* JunctiontoAmbient = PbFree Package Total Device Dissipation P 300 mW D (Note: Microdot may be in either location) Alumina Substrate (Note 2) T = 25C A *Date Code orientation and/or overbar may Derate Above 25C 2.4 mW/C vary depending upon manufacturing location. Thermal Resistance, R 417 C/W JA JunctiontoAmbient ORDERING INFORMATION Junction and Storage Temperature T , T 55 to +150 C J stg Device Package Shipping 1. FR5 = 1.0 0.75 0.062 in. MMBT5401LT1G SOT23 3,000 / Tape & 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. (PbFree) Reel SMMBT5401LT1G SOT23 3,000 / Tape & (PbFree) Reel MMBT5401LT3G SOT23 10,000 / Tape & (PbFree) Reel NSVMMBT5401LT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: December, 2017 Rev. 14 MMBT5401LT1/DMMBT5401L, SMMBT5401L, NSVMMBT5401L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 150 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 160 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C CollectorBase Cutoff Current I CBO (V = 120 Vdc, I = 0) 50 nAdc CB E (V = 120 Vdc, I = 0, T = 100C) 50 Adc CB E A ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mAdc, V = 5.0 Vdc) 50 C CE (I = 10 mAdc, V = 5.0 Vdc) 60 240 C CE (I = 50 mAdc, V = 5.0 Vdc) 50 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.5 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 1.0 C B (I = 50 mAdc, I = 5.0 mAdc) 1.0 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 10 Vdc, f = 100 MHz) 100 300 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 6.0 CB E Small Signal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 40 200 C CE Noise Figure NF dB (I = 200 Adc, V = 5.0 Vdc, R = 10 , f = 1.0 kHz) 8.0 C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2