High Voltage Transistors NPN Silicon MMBT5550L, MMBT5551L Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 www.onsemi.com Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector Emitter Voltage V Vdc 2 CEO MMBT5550 140 EMITTER MMBT5551 160 Collector Base Voltage V Vdc CBO MARKING 3 MMBT5550 160 DIAGRAM MMBT5551 180 1 Emitter Base Voltage V 6.0 Vdc 2 EBO x1x M Collector Current Continuous I 600 mAdc C SOT23 (TO236) CASE 318 Electrostatic Discharge ESD V 1 STYLE 6 Human Body Model > 8000 Machine Model > 400 x1x = Device Code THERMAL CHARACTERISTICS M1F = MMBT5550LT G1 = MMBT5551LT Characteristic Symbol Max Unit M = Date Code* Total Device Dissipation FR5 Board P D = PbFree Package (Note 1) T = 25C 225 mW A (Note: Microdot may be in either location) Derate Above 25C 1.8 mW/C *Date Code orientation and/or overbar may vary depending upon manufacturing location. Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina P D Substrate (Note 2) T = 25C 300 mW A Derate Above 25C 2.4 mW/C ORDERING INFORMATION Thermal Resistance, JunctiontoAmbient R 417 C/W JA Device Package Shipping Junction and Storage Temperature T , T 55 to +150 C MMBT5550LT1G, SOT23 3,000 / Tape & J stg NSVMMBT5550LT1G (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MMBT5550LT3G SOT23 10,000 / Tape & assumed, damage may occur and reliability may be affected. (PbFree) Reel 1. FR5 = 1.0 0.75 0.062 in. MMBT5551LT1G SOT23 3,000 / Tape & 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. (PbFree) Reel SMMBT5551LT1G SOT23 3,000 / Tape & (PbFree) Reel MMBT5551LT3G SOT23 10,000 / Tape & (PbFree) Reel SMMBT5551LT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: May, 2020 Rev. 13 MMBT5550LT1/DMMBT5550L, MMBT5551L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MMBT5550 140 C B MMBT5551 160 Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) MMBT5550 160 C E MMBT5551 180 Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 6.0 E C Collector Cutoff Current I CBO (V = 100 Vdc, I = 0) MMBT5550 100 nAdc CB E (V = 120 Vdc, I = 0) MMBT5551 50 CB E (V = 100 Vdc, I = 0, T = 100C) MMBT5550 100 Adc CB E A (V = 120 Vdc, I = 0, T = 100C) MMBT5551 50 CB E A Emitter Cutoff Current I nAdc EBO (V = 4.0 Vdc, I = 0) 50 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mAdc, V = 5.0 Vdc) MMBT5550 60 C CE MMBT5551 80 (I = 10 mAdc, V = 5.0 Vdc) MMBT5550 60 250 C CE MMBT5551 80 250 (I = 50 mAdc, V = 5.0 Vdc) MMBT5550 20 C CE MMBT5551 30 Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) Both Types 0.15 C B (I = 50 mAdc, I = 5.0 mAdc) MMBT5550 0.25 C B MMBT5551 0.20 Base Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) Both Types 1.0 C B (I = 50 mAdc, I = 5.0 mAdc) MMBT5550 1.2 C B MMBT5551 1.0 Collector Emitter Cutoff I nA CES (V = 10 V) Both Types 50 CB (V = 75 V) 100 CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. www.onsemi.com 2