MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load www.onsemi.com Management in Portable Applications 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 (TO236) CASE 318 Compliant STYLE 6 MAXIMUM RATINGS (T = 25C) A COLLECTOR 3 Rating Symbol Value Unit CollectorEmitter Voltage V 30 Vdc CEO 1 CollectorBase Voltage V 50 Vdc CBO BASE EmitterBase Voltage V 5.0 Vdc EBO 2 Collector Current Continuous I 1.0 Adc C EMITTER Collector Current Peak I 2.0 A CM MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, P D G3 M (Note 1) T = 25C 310 mW A Derate above 25C 2.5 mW/C 1 Thermal Resistance C/W R JA JunctiontoAmbient (Note 1) 403 G3 = Device Code M = Date Code* Total Device Dissipation Alumina P D = PbFree Package Substrate, (Note 2) T = 25C 710 mW A Derate above 25C 5.7 mW/C (Note: Microdot may be in either location) *Date Code orientation and/or overbar may Thermal Resistance R C/W JA vary depending upon manufacturing location. JunctiontoAmbient (Note 2) 176 Total Device Dissipation (Ref. Figure 8) P Dsingle ORDERING INFORMATION (Single Pulse < 10 sec.) 575 mW Device Package Shipping Junction and Storage Temperature T , T 55 to +150 C J stg MMBT589LT1G SOT23 3,000 / Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Tape & Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NSVMMBT589LT1G SOT23 3,000 / 1. FR4 Minimum Pad (PbFree) Tape & Reel 2. FR4 1.0 X 1.0 inch Pad For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1998 1 Publication Order Number: October, 2016 Rev. 7 MMBT589LT1/DMMBT589LT1G, NSVMMBT589LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 30 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 50 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 5.0 E C Collector Cutoff Current I Adc CBO (V = 30 Vdc, I = 0) 0.1 CB E CollectorEmitter Cutoff Current I Adc CES (V = 30 Vdc) 0.1 CES Emitter Cutoff Current I Adc EBO (V = 4.0 Vdc) 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 3) (Figure 1) h FE (I = 1.0 mA, V = 2.0 V) 100 C CE (I = 500 mA, V = 2.0 V) 100 300 C CE (I = 1.0 A, V = 2.0 V) 80 C CE (I = 2.0 A, V = 2.0 V) 40 C CE CollectorEmitter Saturation Voltage (Note 3) (Figure 3) V V CE(sat) (I = 0.5 A, I = 0.05 A) 0.25 C B (I = 1.0 A, I = 0.1 A) 0.30 C B (I = 2.0 A, I = 0.2 A) 0.65 C B BaseEmitter Saturation Voltage (Note 3) (Figure 2) V V BE(sat) (I = 1.0 A, I = 0.1 A) 1.2 C B BaseEmitter Turnon Voltage (Note 3) V V BE(on) (I = 1.0 A, V = 2.0 V) 1.1 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 100 C CE Output Capacitance Cobo pF (f = 1.0 MHz) 15 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% www.onsemi.com 2