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Collector Absolute Maximum Ratings* T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 50 V CEO V Collector-Base Voltage 60 V CBO I Collector Current - Continuous 500 mA C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 1.0mA, I = 0 50 V (BR)CEO C B V Collector-Base BreakdownVoltage I = 100 A, I = 0 60 V (BR)CBO C E I Collector Cut-off Current V = 30V, I = 0 0.1 A CEO CE B I Collector Cut-off Current V = 30V, I = 0 10 nA CBO CB E I Emitter Cut-off Current V = 5.0V, I = 0 10 nA EBO EB B On Characteristics h DC Current Gain V = 5.0V, I = 10 A 250 FE CE C V = 5.0V, I = 100 A 250 650 CE C V = 5.0V, I = 1.0mA 250 CE C V = 5.0V, I = 10mA 250 CE C V (sat) Collector-Emitter Saturation Voltage I = 10mA, I = 0.5mA 0.2 V CE C B I = 100mA, I = 5.0mA 0.6 C B V (on) Base-Emitter On Voltage V = 5.0V, I = 1.0mA 0.56 0.66 V BE CE C Small Signal Characteristics f Current gain Bandwidth Product V = 5.0V, I = 1.0mA, 100 700 MHz T CE C f = 100MHz C Output Capacitance V = 10V, I = 0, f = 1.0MHz 3.0 pF obo CB E C Input Capacitance V = 0.5V, I = 0, f = 1.0MHz 8.0 pF ibo EB C *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 2002 Fairchild Semiconductor Corporation Rev. A, October 2002