MMBT6517L,
NSVMMBT6517L
High Voltage Transistor
NPN Silicon
MMBT6517L, NSVMMBT6517L
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage V V
(BR)CEO
(I = 1.0 mA) 350
C
Collector Base Breakdown Voltage V V
(BR)CBO
(I = 100 A) 350
C
Emitter Base Breakdown Voltage V V
(BR)EBO
(I = 10 A) 6.0
E
Collector Cutoff Current I nA
CBO
(V = 250 V) 50
CB
Emitter Cutoff Current I nA
EBO
(V = 5.0 V) 50
EB
ON CHARACTERISTICS
DC Current Gain h
FE
(I = 1.0 mA, V = 10 V) 20
C CE
(I = 10 mA, V = 10 V) 30
C CE
(I = 30 mA, V = 10 V) 30 200
C CE
(I = 50 mA, V = 10 V) 20 200
C CE
(I = 100 mA, V = 10 V) 15
C CE
Collector Emitter Saturation Voltage (Note 3) V V
CE(sat)
(I = 10 mA, I = 1.0 mA) 0.30
C B
(I = 20 mA, I = 2.0 mA) 0.35
C B
(I = 30 mA, I = 3.0 mA) 0.50
C B
(I = 50 mA, I = 5.0 mA) 1.0
C B
Base Emitter Saturation Voltage V V
BE(sat)
(I = 10 mA, I = 1.0 mA) 0.75
C B
(I = 20 mA, I = 2.0 mA) 0.85
C B
(I = 30 mA, I = 3.0 mA) 0.90
C B
Base Emitter On Voltage V V
BE(on)
(I = 100 mA, V = 10 V) 2.0
C CE
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product f MHz
T
(I = 10 mA, V = 20 V, f = 20 MHz) 40 200
C CE
CollectorBase Capacitance C pF
cb
(V = 20 V, f = 1.0 MHz) 6.0
CB
EmitterBase Capacitance C pF
eb
(V = 0.5 V, f = 1.0 MHz) 80
EB
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.