MMBT8099LT1G Amplifier Transistor NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage V 80 Vdc CEO 2 Collector-Base Voltage V 80 Vdc CBO EMITTER Emitter-Base Voltage V 6.0 Vdc EBO Collector Current Continuous I 500 mAdc C 3 THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit 2 Total Device Dissipation FR5 Board P D (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C SOT23 (TO236) CASE 318 Thermal Resistance, Junction-to-Ambient R 556 C/W JA STYLE 6 (Note 1) Total Device Dissipation Alumina P D Substrate (Note 2) T = 25C 300 mW A MARKING DIAGRAM Derate above 25C 2.4 mW/C Thermal Resistance, Junction-to-Ambient R 417 C/W JA (Note 2) KB M Junction and Storage Temperature Range T , T 55 to +150 C J stg 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be KB = Specific Device Code assumed, damage may occur and reliability may be affected. M = Date Code* 1. FR5 = 1.0 X 0.75 X 0.062 in. = PbFree Package 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT8099LT1G SOT23 3000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: October, 2016 Rev. 3 MMBT8099LT1/DMMBT8099LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 10 mAdc, I = 0) 80 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 80 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 6.0 E C Collector Cutoff Current I Adc CES (V = 60 Vdc, I = 0) 0.1 CE B Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) 0.1 CB E (V = 80 Vdc, I = 0) CB E Emitter Cutoff Current I Adc EBO (V = 6.0 Vdc, I = 0) 0.1 EB C (V = 4.0 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 1.0 mAdc, V = 5.0 Vdc) 100 300 C CE (I = 10 mAdc, V = 5.0 Vdc) 100 C CE (I = 100 mAdc, V = 5.0 Vdc) 75 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 100 mAdc, I = 5.0 mAdc) 0.4 C B (I = 100 mAdc, I = 10 mAdc) 0.3 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.0 mAdc, V = 5.0 Vdc) C CE (I = 10 mAdc, V = 5.0 Vdc) 0.6 0.8 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 150 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 6.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 25 EB C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2