MMBT918LT1G VHF/UHF Transistor NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE CollectorEmitter Voltage V 15 Vdc CEO CollectorBase Voltage V 30 Vdc 2 CBO EMITTER EmitterBase Voltage V 3.0 Vdc EBO Collector Current Continuous I 50 mAdc C 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 1 2 Total Device Dissipation FR5 Board, P D (Note 1) T = 25C 225 mW A SOT23 (TO236) Derate above 25C 1.8 mW/C CASE 318 STYLE 6 Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina P D Substrate, (Note 2) T = 25C 300 mW A MARKING DIAGRAM Derate above 25C 2.4 mW/C Thermal Resistance, JunctiontoAmbient R 417 C/W JA Junction and Storage Temperature T , T 55 to +150 C J stg M3B M Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 1 assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. M3B = Device Code 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT918LT1G SOT23 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 7 MMBT918LT1/DMMBT918LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 3.0 mAdc, I = 0) 15 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 1.0 Adc, I = 0) 30 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 3.0 E C Collector Cutoff Current I nAdc CBO (V = 15 Vdc, I = 0) 50 CB E ON CHARACTERISTICS DC Current Gain h FE (I = 3.0 mAdc, V = 1.0 Vdc) 20 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 1.0 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 4.0 mAdc, V = 10 Vdc, f = 100 MHz) 600 C CE Output Capacitance C pF obo (V = 0 Vdc, I = 0, f = 1.0 MHz) 3.0 CB E (V = 10 Vdc, I = 0, f = 1.0 MHz) 1.7 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 2.0 EB C Noise Figure NF dB (I = 1.0 mAdc, V = 6.0 Vdc, R = 50 , f = 60 MHz) (Figure 1) 6.0 C CE S Power Output P mW out (I = 8.0 mAdc, V = 15 Vdc, f = 500 MHz) 30 C CB CommonEmitter Amplifier Power Gain G dB pe (I = 6.0 mAdc, V = 12 Vdc, f = 200 MHz) 11 C CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. V BB V EXTERNAL CC 100 k 1000 pF BYPASS 0.018 F 0.018 F RF 3 C VM 50 G 0.018 F 0.018 F NF TEST CONDITIONS G TEST CONDITIONS pe I = 1.0 mA I = 6.0 mA C C V = 6.0 VOLTS V = 12 VOLTS CE CE R = 50 f = 200 MHz S f = 60 MHz Figure 1. NF, G Measurement Circuit 20200 pe www.onsemi.com 2