MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOT23 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 CollectorEmitter Voltage V Vdc CEO BASE MMBTA55 60 MMBTA56, SMMBTA56 80 2 CollectorBase Voltage V Vdc CBO EMITTER MMBTA55 60 MMBTA56, SMMBTA56 80 MARKING DIAGRAM EmitterBase Voltage V 4.0 Vdc EBO Collector Current Continuous I 500 mAdc C 2xx M THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 1 Total Device Dissipation FR5 Board P D (Note 1) T = 25C 225 mW A 2xx = Device Code Derate above 25C 1.8 mW/C x = H for MMBTA55LT1G xx = GM for MMBTA56LT1G, Thermal Resistance, JunctiontoAmbient R 556 C/W JA SMMBTA56LT1G Total Device Dissipation Alumina P D M = Date Code* Substrate, (Note 2) T = 25C 300 mW A = PbFree Package Derate above 25C 2.4 mW/C (Note: Microdot may be in either location) Thermal Resistance, JunctiontoAmbient R 417 C/W JA *Date Code orientation and/or overbar may Junction and Storage Temperature T , T 55 to +150 C J stg vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. See detailed ordering and shipping information in the package 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: April, 2018 Rev. 9 MMBTA55LT1/DMMBTA55L Series, MMBTA56L Series, SMMBTA56L Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B MMBTA55 60 MMBTA56, SMMBTA56 80 EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 100 Adc, I = 0) 4.0 E C Collector Cutoff Current I Adc CES (V = 60 Vdc, I = 0) 0.1 CE B Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) CB E MMBTA55 0.1 (V = 80 Vdc, I = 0) CB E MMBTA56, SMMBTA56 0.1 ON CHARACTERISTICS DC Current Gain h FE (I = 10 mAdc, V = 1.0 Vdc) 100 C CE (I = 100 mAdc, V = 1.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) 0.25 C B BaseEmitter On Voltage V Vdc BE(on) (I = 100 mAdc, V = 1.0 Vdc) 1.2 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) f MHz T (I = 100 mAdc, V = 1.0 Vdc, f = 100 MHz) 50 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. f is defined as the frequency at which h extrapolates to unity. T fe TURN-ON TIME TURN-OFF TIME V V +V -1.0 V CC CC BB +40 V +40 V 5.0 s 100 R 100 R L L OUTPUT OUTPUT +10 V V R V R in B in B 0 t = 3.0 ns * C 6.0 pF * C 6.0 pF r S S 5.0 F 5.0 F 100 100 5.0 s t = 3.0 ns r *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits www.onsemi.com 2