X-On Electronics has gained recognition as a prominent supplier of MMBTA56LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBTA56LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBTA56LT1G ON Semiconductor

MMBTA56LT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.MMBTA56LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 500mA 80V PNP
Datasheet: MMBTA56LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0226 ea
Line Total: USD 67.8 
Availability - 392850
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 MMBTA56LT1G More Buying Options & Price Grid(s)

Availability Price Quantity
392850
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0226
9000 : USD 0.0207
27000 : USD 0.0203
51000 : USD 0.0198
102000 : USD 0.0192
150000 : USD 0.0189
252000 : USD 0.0186
501000 : USD 0.0183

3154440
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0281
9000 : USD 0.0238
24000 : USD 0.0235
48000 : USD 0.0188

21298
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0396
100 : USD 0.0319
300 : USD 0.0275
3000 : USD 0.0249
6000 : USD 0.0228
9000 : USD 0.0216

29
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.21
5 : USD 0.154
10 : USD 0.1274
25 : USD 0.0966
50 : USD 0.0784

56793
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

29100
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

392850
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0277
9000 : USD 0.0253
27000 : USD 0.0249
51000 : USD 0.0243
102000 : USD 0.0234

3154440
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0281
9000 : USD 0.0238
24000 : USD 0.0235
48000 : USD 0.0188

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBTA56LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTA56LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The MMBTA56LT1G is an NPN small signal transistor from ON Semiconductor. It is designed for use in a wide range of general-purpose switching and amplification applications. This device is rated for a maximum current rating of 800 mA and a maximum collector-emitter voltage of 60 V. With a total power dissipation of 1 W and a maximum junction temperature of 150 °C, it is suited for operation across temperatures ranging from -65 °C to 150 °C. This component also features a high hFE of 2500 minimum at 250 mA.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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FAIRCHILD
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FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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