X-On Electronics has gained recognition as a prominent supplier of MMBTA92LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBTA92LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBTA92LT1G ON Semiconductor

MMBTA92LT1G electronic component of ON Semiconductor
MMBTA92LT1G ON Semiconductor
MMBTA92LT1G Bipolar Transistors - BJT
MMBTA92LT1G  Semiconductors

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See Product Specifications
Part No. MMBTA92LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 500mA 300V PNP
Datasheet: MMBTA92LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0237 ea
Line Total: USD 71.1 
Availability - 43650
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
43650
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0237
9000 : USD 0.0229
27000 : USD 0.0223
51000 : USD 0.0218
102000 : USD 0.0215
150000 : USD 0.0214
252000 : USD 0.0212
501000 : USD 0.0211

18
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 19
Multiples : 1
19 : USD 0.2277
330 : USD 0.197

281
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 290
Multiples : 1
290 : USD 0.195
544 : USD 0.1195
1037 : USD 0.0626
1188 : USD 0.0547
3000 : USD 0.0373
9000 : USD 0.0298
48000 : USD 0.0257
99000 : USD 0.0228

1824570
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0389
9000 : USD 0.031
48000 : USD 0.0269
99000 : USD 0.0221

3476
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.224
10 : USD 0.1386
50 : USD 0.0882
100 : USD 0.0728
491 : USD 0.035

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBTA92LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTA92LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements AECQ101 Qualified and 3 PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol 92 93 Unit EMITTER CollectorEmitter Voltage V 300 200 Vdc CEO MARKING CollectorBase Voltage V 300 200 Vdc 3 CBO DIAGRAM EmitterBase Voltage V 5.0 5.0 Vdc EBO 1 Collector Current Continuous I 500 mAdc C 2 2x M DEVICE MARKING SOT23 (TO236AF) MMBTA92L, SMMBTA92L = 2D MMBTA93LT1 = 2E CASE 318 STYLE 6 THERMAL CHARACTERISTICS 2x = Specific Device Code Characteristic Symbol Max Unit M = Date Code* Total Device Dissipation FR5 Board P 225 mW D = PbFree Package (Note 1) T = 25C A (*Note: Microdot may be in either location) Derate above 25C 1.8 mW/C *Date Code orientation and/or overbar may Thermal Resistance, Junction to Ambient R 556 C/W JA vary depending upon manufacturing location. Total Device Dissipation (Note 2) P 300 mW D (2) Alumina Substrate, T = 25C A Derate above 25C 2.4 mW/C ORDERING INFORMATION Thermal Resistance, Junction to Ambient R 417 C/W JA Device Package Shipping Junction and Storage Temperature T , T 55 to C J stg MMBTA92LT1G SOT23 3000 / Tape & Reel +150 (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the SMMBTA92LT1G SOT23 3000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. MMBTA92LT3G SOT23 10000 / Tape & Reel 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. (PbFree) SMMBTA92LT3G SOT23 10000 / Tape & Reel (PbFree) MMBTA93LT1G SOT23 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 11 MMBTA92LT1/DMMBTA92L, SMMBTA92L, MMBTA93L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MMBTA92, SMMBTA92 300 C B MMBTA93 200 CollectorBase Breakdown Voltage V Vdc (BR)CBO 300 (I = 100 Adc, I = 0) MMBTA92, SMMBTA92 C E 200 MMBTA93 EmitterBase Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E C Collector Cutoff Current I Adc CBO (V = 200 Vdc, I = 0) MMBTA92, SMMBTA92 0.25 CB E (V = 160 Vdc, I = 0) MMBTA93 0.25 CB E Emitter Cutoff Current I 0.1 Adc EBO (V = 3.0 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 1.0 mAdc, V = 10 Vdc) Both Types 25 C CE (I = 10 mAdc, V = 10 Vdc) Both Types 40 C CE (I = 30 mAdc, V = 10 Vdc) MMBTA92, SMMBTA92 25 C CE MMBTA93 25 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) MMBTA92, SMMBTA92 0.5 C B MMBTA93 0.5 BaseEmitter Saturation Voltage V 0.9 Vdc BE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 50 MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) C CE CollectorBase Capacitance C pF cb (V = 20 Vdc, I = 0, f = 1.0 MHz) MMBTA92, SMMBTA92 6.0 CB E MMBTA93 8.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 300 V = 10 Vdc CE T = +125C J 250 200 25C 150 -55C 100 50 0 0.1 1.0 10 100 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain www.onsemi.com 2 h , DC CURRENT GAIN FE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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