MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor www.onsemi.com NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications SOT23 (TO236) Requiring Unique Site and Control Change Requirements CASE 318 AECQ101 Qualified and PPAP Capable STYLE 6 These Devices are PbFree, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage V 25 Vdc CEO EMITTER Collector-Base Voltage V 30 Vdc CBO MARKING DIAGRAMS Emitter-Base Voltage V 3.0 Vdc EBO THERMAL CHARACTERISTICS 3EM M 3E4 M Characteristic Symbol Max Unit Total Device Dissipation P D FR5 Board (Note 1) MMBTH10LT1G, MMBTH1004LT1G T = 25C 225 mW A NSVMMBTH10LT1G Derate above 25C 1.8 mW/C Thermal Resistance, R 556 C/W JA 3EM, 3E4= Specific Device Code Junction to Ambient (Note 1) M = Date Code* = PbFree Package Total Device Dissipation P D (Note: Microdot may be in either location) Alumina Substrate (Note 2) T = 25C 300 mW *Date Code orientation and/or overbar may A vary depending upon manufacturing location. Derate above 25C 2.4 mW/C Thermal Resistance, R 417 C/W JA ORDERING INFORMATION Junction to Ambient (Note 2) Junction and Storage T , T 55 to C Device Package Shipping J stg Temperature Range +150 MMBTH10LT1G SOT23 3,000 / Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Tape & Reel device. If any of these limits are exceeded, device functionality should not be NSVMMBTH10LT1G SOT23 3,000 / assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina MMBTH104LT1G SOT23 3,000 / (PbFree) Tape & Reel MMBTH10LT3G, SOT23 10,000 / SMMBTH104LT3G (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 6 MMBTH10LT1/DMMBTH10L, MMBTH104L, SMMBTH104L, NSVMMBTH10L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 25 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 30 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 3.0 E C Collector Cutoff Current I nAdc CBO (V = 25 Vdc, I = 0) 100 CB E Emitter Cutoff Current I nAdc EBO (V = 2.0 Vdc, I = 0) 100 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 4.0 mAdc, V = 10 Vdc) C CE MMBTH10LT1G, NSVMMBTH10LT1G 60 MMBTH104LT1G, SMMBTH104LT3G 120 240 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 4.0 mAdc, I = 0.4 mAdc) 0.5 C B BaseEmitter On Voltage V Vdc BE (I = 4.0 mAdc, V = 10 Vdc) 0.95 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 4.0 mAdc, V = 10 Vdc, f = 100 Mhz) C CE MMBTH10LT1G, NSVMMBTH10LT1G 650 MMBTH104LT1G, SMMBTH104LT3G 800 CollectorBase Capacitance C pF cb (V = 10 Vdc, I = 0, f = 1.0 MHz) 0.7 CB E CommonBase Feedback Capacitance C pF rb (V = 10 Vdc, I = 0, f = 1.0 MHz) 0.65 CB E Collector Base Time Constant rbC ps c (I = 4.0 mAdc, V = 10 Vdc, f = 31.8 MHz) 9.0 C CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2