X-On Electronics has gained recognition as a prominent supplier of MMBTH10M3T5G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBTH10M3T5G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBTH10M3T5G ON Semiconductor

MMBTH10M3T5G electronic component of ON Semiconductor
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See Product Specifications
Part No.MMBTH10M3T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 25V Automotive 3-Pin SOT-723 T/R
Datasheet: MMBTH10M3T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.0469 ea
Line Total: USD 375.2 
Availability - 23280
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
23280
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 8000
Multiples : 8000
8000 : USD 0.0469
16000 : USD 0.0466
24000 : USD 0.0445
40000 : USD 0.0429
48000 : USD 0.0412
56000 : USD 0.0401
80000 : USD 0.0396

20597
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.374
10 : USD 0.253
100 : USD 0.1067
1000 : USD 0.0715
2500 : USD 0.0616
8000 : USD 0.0473
24000 : USD 0.0451
48000 : USD 0.0418
96000 : USD 0.0407

23280
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 8000
Multiples : 8000
8000 : USD 0.0469
16000 : USD 0.0466
24000 : USD 0.0445
40000 : USD 0.0429
48000 : USD 0.0412
56000 : USD 0.0401
80000 : USD 0.0396

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBTH10M3T5G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBTH10M3T5G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spinoff of our popular SOT 23 threeleaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT723 surface mount package. This device is ideal for low power surface mount applications where board space is at a premium. MMBTH10M3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 25 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B CollectorBase Breakdown Voltage V 30 Vdc (BR)CBO (I = 100 Adc, I = 0) C E EmitterBase Breakdown Voltage V 3.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I 100 nAdc CBO (V = 25 Vdc, I = 0) CB E Emitter Cutoff Current I 100 nAdc EBO (V = 2.0 Vdc, I = 0) EB C ON CHARACTERISTICS DC Current Gain h FE (I = 4.0 mAdc, V = 10 Vdc) 60 C CE CollectorEmitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 4.0 mAdc, I = 0.4 mAdc) C B BaseEmitter On Voltage V 0.95 Vdc BE (I = 4.0 mAdc, V = 10 Vdc) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 4.0 mAdc, V = 10 Vdc, f = 100 MHz) 650 C CE Collector Base Capacitance C 0.7 pF cb (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Common Base Feedback Capacitance C 0.65 pF rb (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Collector Base Time Constant rbC 9.0 ps c (I = 4.0 mAdc, V = 10 Vdc, f = 31.8 MHz) C CB

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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