MMDL6050T1G ON Semiconductor

MMDL6050T1G, SMMDL6050T1G Switching Diode Features AECQ101 Qualified and PPAP Capable MMDL6050T1G, SMMDL6050T1G 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R V PULSE SAMPLING R OUTPUT PULSE OSCILLOSCOPE GENERATOR INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit 100 10 T = 150C A T = 85C T = 125C A A 1.0 10 T = - 40C A T = 85C A 0.1 T = 55C 1.0 A T = 25C A 0.01 T = 25C A 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 0.64 0.60 0.56 0.52 0 24 6 8 V , REVERSE VOLTAGE (VOLTS) R Figure 4. Capacitance