MMPQ2907 MMPQ2907 B4 E4 B3 E3 B2 E2 B1 E1 C4 C4 C3 C3 C2 C2 SOIC-16 C1 C1 pin 1 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 600 mA C Operating and Storage Junction Temperature Range -55 to +150 T , T C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MMPQ2907 P Total Device Dissipation 1,000 mW D Derate above 25C 8.0 mW/C Thermal Resistance, Junction to Ambient RJA C/W Effective 4 Die 125 C/W Each Die 240 C/W 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm mounting pad for the collector lead min. 6 cm . **Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06 2001 Fairchild Semiconductor Corporation MMPQ2907, Rev AMMPQ2907 PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown I = 10 mA, I = 0 40 V (BR)CEO C B Voltage* V Collector-Base Breakdown Voltage I = 10 A, I = 0 60 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10 A, I = 0 5.0 V (BR)EBO E C I Emitter Cutoff Current V = 30 V 50 nA EBO EB I Collector Cutoff Current V = 30 V 50 nA CBO CB ON CHARACTERISTICS h DC Current Gain I = 10 mA, V = 10 V 75 FE C CE I = 150 mA, V = 10 V* 100 300 C CE I = 300 mA, V = 10 V 30 C CE I = 500 mA, V = 10 V* 50 C CE Collector-Emitter Saturation I = 150 mA, I = 15 mA 0.4 V V C B CE(sat) = 300 mA, I = 30 mA 1.6 V Voltage* IC B Base-Emitter Saturation Voltage I = 150 mA, I = 15 mA* 1.3 V V C B BE(sat) I = 300 mA, I = 30 mA 2.6 V C B *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation vs Collector Current Voltage vs Collector Current 500 0.5 V = 5V = 10 CE 400 0.4 125 C 300 0.3 25 C 25 C 200 0.2 125 C 0.1 100 - 40 C - 40 C 0 0 0.1 0.3 1 3 10 30 100 300 110 100 500 I - COC LLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA) C Spice Model PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2 Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p Itf=.65 Vtf=5 Xtf=1.7 Rb=10) FE CESAT h - TYPICAL PULSED CURRENT GAIN V - COLLECTOR EMITTER VOLTAGE (V)