MMJT9435T1 ON Semiconductor

MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features PbFree Packages are Available MMJT9435 MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit CollectorEmitter Voltage V 30 Vdc CEO CollectorBase Voltage V 45 Vdc CB EmitterBase Voltage V 6.0 Vdc EB Base Current Continuous I 1.0 Adc B Collector Current Continuous I 3.0 Adc C 5.0 Collector Current Peak Total Power Dissipation @ T = 25C P 3.0 W C D 24 mW/C Derate above 25C 1.56 W Total P @ T = 25C mounted on 1 sq. (645 sq. mm) Collector pad on FR4 bd material D A 0.72 Total P @ T = 25C mounted on 0.012 sq. (7.6 sq. mm) Collector pad on FR4 bd material D A Operating and Storage Junction Temperature Range T , T 55 to +150 C J stg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 42 C/W JC R 80 JunctiontoAmbient on 1 sq. (645 sq. mm) Collector pad on FR4 bd material JA R 174 JunctiontoAmbient on 0.012 sq. (7.6 sq. mm) Collector pad on FR4 bd material JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds T 260 C L ORDERING INFORMATION Device Package Shipping MMJT9435T1 SOT223 1000 / Tape & Reel MMJT9435T1G SOT223 1000 / Tape & Reel (PbFree) MMJT9435T3 SOT223 4000 / Tape & Reel MMJT9435T3G SOT223 4000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.