X-On Electronics has gained recognition as a prominent supplier of MMJT350T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMJT350T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMJT350T1G ON Semiconductor

MMJT350T1G electronic component of ON Semiconductor
MMJT350T1G ON Semiconductor
MMJT350T1G Bipolar Transistors - BJT
MMJT350T1G  Semiconductors

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See Product Specifications
Part No. MMJT350T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 300 V 500 mA 650 mW Surface Mount SOT-223 (TO-261)
Datasheet: MMJT350T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5663 ea
Line Total: USD 0.57 
Availability - 1382
Ship by Tue. 29 Apr to Thu. 01 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1382
Ship by Tue. 29 Apr to Thu. 01 May
MOQ : 1
Multiples : 1
1 : USD 0.5663
10 : USD 0.5638
100 : USD 0.3949
500 : USD 0.3278
1000 : USD 0.3047
2000 : USD 0.2794
5000 : USD 0.2772
10000 : USD 0.2761
25000 : USD 0.2662

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMJT350T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMJT350T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMJT350 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in lineoperated applications such as low power, lineoperated series pass and switching regulators requiring PNP capability. www.onsemi.com Features 0.5 AMPERE High CollectorEmitter Sustaining Voltage POWER TRANSISTOR Excellent DC Current Gain PNP SILICON Epoxy Meets UL 94 V0 0.125 in 300 VOLTS, 2.75 WATTS S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and C 2,4 PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* B 1 E 3 Schematic MARKING DIAGRAM 4 SOT223 AYW CASE 318E T350 1 2 STYLE 1 3 A = Assembly Location Y = Year W = Work Week = PbFree Package T350 = Device Code (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MMJT350T1G SOT223 1,000 / Tape & Reel (PbFree) SMMJT350T1G SOT223 1,000 / Tape & Reel (PbFree) SMMJT350T3G SOT223 4,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications *For additional information on our PbFree strategy and soldering details, please Brochure, BRD8011/D. download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: January, 2019 Rev. 8 MMJT350T1/DMMJT350 MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit CollectorEmitter Voltage V 300 Vdc CEO CollectorBase Voltage V 300 Vdc CB EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 0.5 Adc C Collector Current Peak I 0.75 Adc CM Total Power Dissipation P D T = 25C 2.75 W C Derate above 25C 22 mW/C Total P T = 25C mounted on 1 sq. (645 sq. mm) Collector pad on FR4 bd material 1.40 W D A Total P T = 25C mounted on 0.012 sq. (7.6 sq. mm) Collector pad on FR4 bd material 0.65 W D A Operating and Storage Junction Temperature Range T , T 55 to +150 C J stg ESD Human Body Model HBM 3B V ESD Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance C/W JunctiontoCase R 45 JC JunctiontoAmbient on 1 sq. (645 sq. mm) Collector pad on FR4 bd material R 85 JA JunctiontoAmbient on 0.012 sq. (7.6 sq. mm) Collector pad on FR4 bd material R 190 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(SUS (I = 1.0 mAdc, I = 0 Adc) 300 C B ) CollectorBase Current I nAdc CBO (V = Rated V , V = 0) 100 CB CBO EB Emitter Cutoff Current I nAdc EBO (V = 5.0 Vdc) 100 BE ON CHARACTERISTICS DC Current Gain h FE (I = 50 mAdc, V = 10 Vdc) 30 240 C CE (I = 100 mAdc, V = 10 Vdc) 20 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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