MMPQ3906
Preferred Device
Quad Amplifier/Switch
Transistor
PNP Silicon
MMPQ3906
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 1) V 40 Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
C B
Collector Base Breakdown Voltage V 40 Vdc
(BR)CBO
(I = 10 Adc, I = 0)
C E
Emitter Base Breakdown Voltage V 5.0 Vdc
(BR)EBO
(I = 10 Adc, I = 0)
E C
Collector Cutoff Current I 50 nAdc
CBO
(V = 30 Vdc, I = 0)
CB E
Emitter Cutoff Current I 50 nAdc
EBO
(V = 4.0 Vdc, I = 0)
EB C
ON CHARACTERISTICS (Note 1)
DC Current Gain h
FE
(I = 0.1 mAdc, V = 1.0 Vdc) 40 160
C CE
(I = 1.0 mAdc, V = 1.0 Vdc) 60 180
C CE
(I = 10 mAdc, V = 1.0 Vdc) 75 200
C CE
Collector Emitter Saturation Voltage V 0.1 0.25 Vdc
CE(sat)
(I = 10 mAdc, I = 1.0 mAdc)
C B
Base Emitter Saturation Voltage V 0.65 0.85 Vdc
BE(sat)
(I = 10 mAdc, I = 1.0 mAdc)
C B
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product f 200 250 MHz
T
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
C CE
Output Capacitance C 3.3 4.5 pF
ob
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
CB E
Input Capacitance C 4.8 10 pF
ib
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
EB C
SWITCHING CHARACTERISTICS
Turn On Time t 43 ns
on
(I = 10 mAdc, V = 0.5 Vdc, I = 1.0 mAdc)
C BE(off) B1
Turn Off Time t 155 ns
off
(I = 10 mAdc, I = I = 1.0 mAdc)
C B1 B2
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.