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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MMPQ6700 Quad NPN and PNP General-Purpose Amplifier January 2015 MMPQ6700 Quad NPN and PNP General-Purpose Amplifier Description These complementary devices can be used in switches with collector currents of 10 A to 100 mA. These devices are best used when space is the primary consid- eration. Sourced from process 23 and 66. See 2N3904 (NPN) and 2N3906 (PNP) for characteristics. E1 B1 E2 B2 E3 B3 E4 B4 B4 E4 B3 E3 B2 E2 B1 E1 C4 C4 C3 C3 C2 C2 SOIC-16 C1 C1 pin 1 Mark: MMPQ6700 C1 C1 C2 C2 C3 C3 C4 C4 Figure 1. Device Package Figure 2. Internal Connection Ordering Information Part Number Top Mark Package Packing Method MMPQ6700 MMPQ6700 SOIC 16L Tape and Reel (1),(2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 200 mA C T , T Operating and Storage Junction Temperature Range -55 to 150 C J STG Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMPQ6700 Rev. 1.5