MMSF3P02HD Power MOSFET 3 Amps, 20 Volts PChannel SO8 These miniature surface mount MOSFETs feature ultra low R DS(on) and true logic level performance. They are capable of withstanding MMSF3P02HD ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 3) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V Vdc (BR)DSS 20 (V = 0 Vdc, I = 250 Adc) GS D Temperature Coefficient (Positive) 24 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 20 Vdc, V = 0 Vdc) 1.0 DS GS (V = 20 Vdc, V = 0 Vdc, T = 125C) 10 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V Vdc GS(th) (V = V , I = 250 Adc) 1.0 1.5 2.0 DS GS D Temperature Coefficient (Negative) 4.0 mV/C Static DrainSource OnResistance R DS(on) (V = 10 Vdc, I = 3.0 Adc) 0.06 0.075 GS D (V = 4.5 Vdc, I = 1.5 Adc) 0.08 0.095 GS D Forward Transconductance (V = 3.0 Vdc, I = 1.5 Adc) g 3.0 7.2 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 1010 1400 pF iss (V = 16 Vdc, V = 0 Vdc, DS GS Output Capacitance C 740 920 oss f = 1.0 MHz) Transfer Capacitance C 260 490 rss SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 25 50 ns d(on) Rise Time t 135 270 r (V = 10 Vdc, I = 3.0 Adc, DD D V = 4.5 Vdc, R = 6.0 ) GS G Turn Off Delay Time t 54 108 d(off) Fall Time t 84 168 f TurnOn Delay Time t 16 32 d(on) Rise Time t 40 80 r (V = 10 Vdc, I = 3.0 Adc, DD D V = 10 Vdc, R = 6.0 ) GS G Turn Off Delay Time t 110 220 d(off) Fall Time t 97 194 f Gate Charge Q 33 46 nC T See Figure 8 Q 3.0 1 (V = 16 Vdc, I = 3.0 Adc, DS D V = 10 Vdc) GS Q 11 2 Q 10 3 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (Note 4) V Vdc SD (I = 3.0 Adc, V = 0 Vdc) S GS 1.35 1.75 (I = 3.0 Adc, V = 0 Vdc, T = 125C) S GS J 0.96 Reverse Recovery Time t 76 ns rr See Figure 15 t 32 a (I = 3.0 Adc, V = 0 Vdc, S GS dI /dt = 100 A/ s) S t 44 b Reverse Recovery Stored Charge Q 0.133 C RR 3. Negative sign for PChannel device omitted for clarity. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperature.