X-On Electronics has gained recognition as a prominent supplier of MPS2222ARLRPG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MPS2222ARLRPG Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MPS2222ARLRPG ON Semiconductor

MPS2222ARLRPG electronic component of ON Semiconductor
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See Product Specifications
Part No.MPS2222ARLRPG
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 600mA 75V NPN
Datasheet: MPS2222ARLRPG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.0323 ea
Line Total: USD 64.6 
Availability - 0
MOQ: 2000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 0.1877

0
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 2000
Multiples : 1
2000 : USD 0.0323
4000 : USD 0.0297
10000 : USD 0.0283
20000 : USD 0.028
30000 : USD 0.0278

0
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 8013
Multiples : 8013
8013 : USD 0.0454

0
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 447
Multiples : 1
447 : USD 0.1877

0
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 447
Multiples : 1
447 : USD 0.2244
501 : USD 0.1485
2001 : USD 0.136

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MPS2222ARLRPG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MPS2222ARLRPG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon MPS2222, MPS2222A ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage MPS2222 V 30 Vdc (BR)CEO (I = 10 mAdc, I = 0) MPS2222A 40 C B CollectorBase Breakdown Voltage MPS2222 V 60 Vdc (BR)CBO (I = 10 Adc, I = 0) MPS2222A 75 C E EmitterBase Breakdown Voltage MPS2222 V 5.0 Vdc (BR)EBO 6.0 (I = 10 Adc, I = 0) MPS2222A E C Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) MPS2222A I 10 nAdc CE EB(off) CEX Collector Cutoff Current I Adc CBO (V = 50 Vdc, I = 0) MPS2222 0.01 CB E (V = 60 Vdc, I = 0) MPS2222A 0.01 CB E (V = 50 Vdc, I = 0, T = 125C) MPS2222 10 CB E A (V = 50 Vdc, I = 0, T = 125C) MPS2222A 10 CB E A Emitter Cutoff Current (V = 3.0 Vdc, I = 0) MPS2222A I 100 nAdc EB C EBO Base Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) MPS2222A I 20 nAdc CE EB(off) BL ON CHARACTERISTICS DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 35 C CE (I = 1.0 mAdc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 10 Vdc) 75 C CE (I = 10 mAdc, V = 10 Vdc, T = 55C) MPS2222A only 35 C CE A (I = 150 mAdc, V = 10 Vdc) (Note 1) 100 300 C CE (I = 150 mAdc, V = 1.0 Vdc) (Note 1) 50 C CE (I = 500 mAdc, V = 10 Vdc) (Note 1) MPS2222 30 C CE MPS2222A 40 CollectorEmitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) MPS2222 0.4 C B MPS2222A 0.3 (I = 500 mAdc, I = 50 mAdc) MPS2222 1.6 C B MPS2222A 1.0 BaseEmitter Saturation Voltage (Note 1) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) MPS2222 1.3 C B MPS2222A 0.6 1.2 (I = 500 mAdc, I = 50 mAdc) MPS2222 2.6 C B MPS2222A 2.0 SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 2) f MHz T (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) MPS2222 250 C CE MPS2222A 300 Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF CB E obo Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) MPS2222 30 EB C MPS2222A 25 Input Impedance h k ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) MPS2222A 2.0 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) MPS2222A 0.25 1.25 C CE 4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) MPS2222A 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) MPS2222A 4.0 C CE SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) MPS2222A 50 300 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) MPS2222A 75 375 C CE Output Admittance h mhos oe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) MPS2222A 5.0 35 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) MPS2222A 25 200 C CE Collector Base Time Constant rbC ps c (I = 20 mAdc, V = 20 Vdc, f = 31.8 MHz) MPS2222A 150 E CB Noise Figure NF dB (I = 100 Adc, V = 10 Vdc, R = 1.0 k , f = 1.0 kHz) MPS2222A 4.0 C CE S 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. f is defined as the frequency at which h extrapolates to unity. T fe

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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