MPS2907A Series General Purpose Transistors PNP Silicon MPS2907A Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) (I = 10 mAdc, I = 0) V 60 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 10 Adc, I = 0) V 60 Vdc C E (BR)CBO Emitter Base Breakdown Voltage (I = 10 Adc, I = 0) V 5.0 Vdc E C (BR)EBO Collector Cutoff Current (V = 30 Vdc, V = 0.5 Vdc) I 50 nAdc CE EB(off) CEX Collector Cutoff Current I Adc CBO (V = 50 Vdc, I = 0) 0.01 CB E (V = 50 Vdc, I = 0, T = 150C) 10 CB E A Base Current (V = 30 Vdc, V = 0.5 Vdc) I 50 nAdc CE EB(off) B ON CHARACTERISTICS DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 75 C CE (I = 1.0 mAdc, V = 10 Vdc) 100 C CE (I = 10 mAdc, V = 10 Vdc) 100 C CE (I = 150 mAdc, V = 10 Vdc) (Note 1) 100 300 C CE (I = 500 mAdc, V = 10 Vdc) (Note 1) 50 C CE Collector Emitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.4 C B (I = 500 mAdc, I = 50 mAdc) 1.6 C B Base Emitter Saturation Voltage (Note 1) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 1.3 C B (I = 500 mAdc, I = 50 mAdc) 2.6 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Notes 1 and 2), f 200 MHz T (I = 50 mAdc, V = 20 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF CB E obo Input Capacitance (V = 2.0 Vdc, I = 0, f = 1.0 MHz) C 30 pF EB C ibo SWITCHING CHARACTERISTICS TurnOn Time (V = 30 Vdc, I = 150 mAdc, t 45 ns CC C on I = 15 mAdc) (Figures 1 and 5) B1 Delay Time t 10 ns d Rise Time t 40 ns r Turn Off Time (V = 6.0 Vdc, I = 150 mAdc, t 100 ns CC C off I = I = 15 mAdc) (Figure 2) B1 B2 Storage Time t 80 ns s Fall Time t 30 ns f 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. f is defined as the frequency at which h extrapolates to unity. T fe