NPN MPS6601; PNP
MPS6651, MPS6652
MPS6652 is a Preferred Device
Amplifier Transistors
Features
Voltage and Current are Negative for PNP Transistors
NPN MPS6601; PNP MPS6651, MPS6652
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage V Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0) MPS6601/6651 25
C B
MPS6652 40
CollectorBase Breakdown Voltage V Vdc
(BR)CBO
(I = 100 Adc, I = 0) MPS6601/6651 25
C E
MPS6652 40
EmitterBase Breakdown Voltage V 4.0 Vdc
(BR)EBO
(I = 10 Adc, I = 0)
E C
Collector Cutoff Current I Adc
CES
(V = 25 Vdc, I = 0) MPS6601/6651 0.1
CE B
(V = 30 Vdc, I = 0) MPS6652 0.1
CE B
Collector Cutoff Current I
Adc
CBO
(V = 25 Vdc, I = 0) MPS6601/6651 0.1
CB E
(V = 30 Vdc, I = 0) MPS6652 0.1
CB E
ON CHARACTERISTICS
DC Current Gain h
FE
(I = 100 mAdc, V = 1.0 Vdc) 50
C CE
(I = 500 mAdc, V = 1.0 Vdc) 50
C CE
(I = 1000 mAdc, V = 1.0 Vdc) 30
C CE
CollectorEmitter Saturation Voltage V Vdc
CE(sat)
(I = 1000 mAdc, I = 100 mAdc) 0.6
C B
BaseEmitter On Voltage V Vdc
BE(on)
(I = 500 mAdc, V = 1.0 Vdc) 1.2
C CE
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product f MHz
T
(I = 50 mAdc, V = 10 Vdc, f = 100 MHz) 100
C CE
Output Capacitance C pF
obo
(V = 10 Vdc, I = 0, f = 1.0 MHz) 30
CB E
SWITCHING CHARACTERISTICS
Delay Time t 25 ns
d
(V = 40 Vdc, I = 500 mAdc,
Rise Time CC C t 30 ns
r
I = 50 mAdc,
B1
Storage Time t 250 ns
t 300 ns Duty Cycle)
s
p
Fall Time t 50 ns
f
ORDERING INFORMATION
Device Package Shipping
MPS6601RLRAG TO92 (TO226)
2000 Units / Tape & Reel
(PbFree)
MPS6651G TO92 (TO226)
(PbFree)
MPS6652 TO92 (TO226) 5000 Units / Bulk
MPS6652G TO92 (TO226)
(PbFree)
MPS6652RLRAG TO92 (TO226)
2000 Units / Tape & Reel
(PbFree)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.