NPN - MPS8099; PNP -
MPS8599
Amplifier Transistors
Voltage and Current are Negative
for PNP Transistors
NPN MPS8099; PNP MPS8599
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 2) V Vdc
(BR)CEO
(I = 10 mAdc, I = 0) 80
C B
Collector Base Breakdown Voltage V Vdc
(BR)CBO
(I = 100 Adc, I = 0) 80
C E
Emitter Base Breakdown Voltage V Vdc
(BR)EBO
(I = 10 Adc, I = 0) 6.0
E C
Collector Cutoff Current I Adc
CES
(V = 60 Vdc, I = 0) 0.1
CE B
Collector Cutoff Current I Adc
CBO
(V = 80 Vdc, I = 0) 0.1
CB E
Emitter Cutoff Current I Adc
EBO
(V = 6.0 Vdc, I = 0) 0.1
EB C
ON CHARACTERISTICS (Note 2)
DC Current Gain h
FE
(I = 1.0 mAdc, V = 5.0 Vdc) 100 300
C CE
(I = 10 mAdc, V = 5.0 Vdc) 100
C CE
(I = 100 mAdc, V = 5.0 Vdc) 75
C CE
Collector Emitter Saturation Voltage V Vdc
CE(sat)
(I = 100 mAdc, I = 5.0 mAdc) 0.4
C B
(I = 100 mAdc, I = 10 mAdc) 0.3
C B
BaseEmitter On Voltage V Vdc
BE(on)
(I = 10 mAdc, V = 5.0 Vdc) 0.6 0.8
C CE
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product f MHz
T
(I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 150
C CE
Output Capacitance C pF
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz) 8.0
CB E
Input Capacitance C pF
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz) 30
EB C
2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%.