X-On Electronics has gained recognition as a prominent supplier of MPSA05RLRMG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MPSA05RLRMG Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MPSA05RLRMG ON Semiconductor

MPSA05RLRMG electronic component of ON Semiconductor
MPSA05RLRMG ON Semiconductor
MPSA05RLRMG Bipolar Transistors - BJT
MPSA05RLRMG  Semiconductors

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See Product Specifications
Part No. MPSA05RLRMG
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 60V 0.5A 3-Pin TO-92 Ammo
Datasheet: MPSA05RLRMG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4579: USD 0.0889 ea
Line Total: USD 407.07 
Availability - 0
MOQ: 4579  Multiples: 4579
Pack Size: 4579
Availability Price Quantity
0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 1
Multiples : 1
1 : USD 0.1696
10 : USD 0.136
25 : USD 0.1151
50 : USD 0.1128
100 : USD 0.1128
500 : USD 0.1128

0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 2000
Multiples : 2000
2000 : USD 0.0526
14000 : USD 0.0499

0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 4579
Multiples : 4579
4579 : USD 0.0889

0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 175
Multiples : 107
175 : USD 0.0891

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MPSA05RLRMG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MPSA05RLRMG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NPN MPSA05, MPSA06* PNP MPSA55, MPSA56* *Preferred Devices Amplifier Transistors Voltage and Current are Negative for PNP Transistors NPN MPSA05, MPSA06* PNP MPSA55, MPSA56* ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MPSA05, MPSA55 60 C B MPSA06, MPSA56 80 EmitterBase Breakdown Voltage V 4.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E C Collector Cutoff Current I 0.1 Adc CES (V = 60 Vdc, I = 0) CE B Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) MPSA05, MPSA55 0.1 CB E (V = 80 Vdc, I = 0) MPSA06, MPSA56 0.1 CB E ON CHARACTERISTICS DC Current Gain h FE (I = 10 mAdc, V = 1.0 Vdc) 100 C CE (I = 100 mAdc, V = 1.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V 0.25 Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) C B BaseEmitter On Voltage V 1.2 Vdc BE(on) (I = 100 mAdc, V = 1.0 Vdc) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 3) f MHz T (I = 10 mA, V = 2.0 V, f = 100 MHz) MPSA05 100 C CE MPSA06 (I = 100 mAdc, V = 1.0 Vdc, f = 100 MHz) MPSA55 50 C CE MPSA56 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. f is defined as the frequency at which h extrapolates to unity. T fe TURNON TIME TURNOFF TIME V +V V CC CC 1.0 V BB +40 V +40 V 5.0 s 100 R 100 R L L +10 V OUTPUT OUTPUT V R V R in B in B 0 t = 3.0 ns * C 6.0 pF * C 6.0 pF r S S 5.0 F 5.0 F 100 100 5.0 s t = 3.0 ns r *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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