MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features These are PbFree Devices* MPSA18 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V Vdc (BR)CEO (I = 10 mAdc, I = 0) 45 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 45 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO 6.5 (I = 10 Adc, I = 0) E C Collector Cutoff Current I nAdc CBO (V = 30 Vdc, I = 0) 1.0 50 CB E ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 10 Adc, V = 5.0 Vdc) 400 580 C CE (I = 100 Adc, V = 5.0 Vdc) 500 850 C CE (I = 1.0 mAdc, V = 5.0 Vdc) 500 1100 C CE (I = 10 mAdc, V = 5.0 Vdc) 500 1150 1500 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.08 0.3 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.0 mAdc, V = 5.0 Vdc) 0.6 0.7 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 1.0 mAdc, V = 5.0 Vdc, f = 100 MHz) 100 160 C CE CollectorBase Capacitance C pF cb (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 1.7 3.0 CB E EmitterBase Capacitance C pF eb (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 5.6 6.5 EB C Noise Figure NF dB (I = 100 Adc, V = 5.0 Vdc, R = 10 k , f = 1.0 kHz) 0.5 1.5 C CE S (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 100 Hz) 4.0 C CE S Equivalent Short Circuit Noise Voltage V T nV Hz (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 100 Hz) 6.5 C CE S 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model