MPSA43 MPSA43 NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from process 48. See MPSA42 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * T =25C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 200 V CES V Collector-Base Voltage 200 V CBO V Emitter-Base Voltage 6.0 V EBO I Collector Current - Continuous 200 mA C T , T Operating and Storage Junction Temperature Range -55 ~ +150 C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted A Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 1.0mA, I = 0 200 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100 A, I = 0 200 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100 A, I = 0 6.0 V (BR)EBO C C I Collector Cutoff Current V = 160V, I = 0 0.1 A CBO CB E I Emitter Cutoff Current V = 4.0V, I = 0 0.1 A EBO EB C On Characteristics * h DC Current Gain I = 1.0mA, V = 10V 25 FE C CE I = 10mA, V = 10V 40 C CE I = 30mA, V = 10V 50 200 C CE V (sat) Collector-Emitter Saturation Voltage I = 20mA, I = 2.0mA 0.4 V CE C B V (sat) Base-Emitter Saturation Voltage I = 20mA, I = 2.0mA 0.9 V BE C B Small Signal Characteristics * f Current Gain Dandwidth Product I = 10mA, V = 20V, f = 100MHz 50 MHz T C CE C Collector-Base Capacitance V = 20V, I = 0, f = 1.0MHz 4.0 pF cb CB E * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Thermal Characteristics T =25C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25C 5.0 mW/C R Thermal Resistance, Junction to Case 83.3 C/W JC R Thermal Resistance, Junction to Ambient 200 C/W JA 2002 Fairchild Semiconductor Corporation Rev. B, November 2002MPSA43 Package Dimensions TO-92 +0.25 4.58 0.15 0.46 0.10 +0.10 1.27TYP 1.27TYP 0.38 0.05 1.27 0.20 1.27 0.20 3.60 0.20 (R2.29) Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation Rev. B, November 2002 3.86MAX 1.02 0.10 +0.10 0.38 0.05 (0.25) 14.47 0.40 4.58 0.20