MPSW42 One Watt High Voltage Transistor NPN Silicon MPSW42 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V 300 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B CollectorBase Breakdown Voltage V 300 Vdc (BR)CBO (I = 100 Adc, I = 0) C E EmitterBase Breakdown Voltage V 6.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E C Collector Cutoff Current I 0.1 Adc CBO (V = 200 Vdc, I = 0) CB E Emitter Cutoff Current I 0.1 Adc EBO (V = 6.0 Vdc, I = 0) EB C ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mAdc, V = 10 Vdc) 25 C CE (I = 10 mAdc, V = 10 Vdc) 40 C CE (I = 30 mAdc, V = 10 Vdc) 40 C CE CollectorEmitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B BaseEmitter Saturation Voltage V 0.9 Vdc BE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 50 MHz T (I = 10 mAdc, V = 20 Vdc, f = 20 MHz) C CE Collector Capacitance C 3.0 pF cb (V = 20 Vdc, I = 0, f = 1.0 MHz) CB E 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.