MPSW45, MPSW45A One Watt Darlington Transistors NPN Silicon MPSW45, MPSW45A ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CES (I = 100 Adc, V = 0) MPSW45 40 C BE MPSW45A 50 Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) MPSW45 50 C E 60 MPSW45A Emitter Base Breakdown Voltage V 12 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I nAdc CBO (V = 30 Vdc, I = 0) MPSW45 100 CB E (V = 40 Vdc, I = 0) MPSW45A 100 CB E Emitter Cutoff Current I 100 nAdc EBO (V = 10 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 200 mAdc, V = 5.0 Vdc) 25,000 150,000 C CE (I = 500 mAdc, V = 5.0 Vdc) 15,000 C CE (I = 1.0 Adc, V = 5.0 Vdc) 4,000 C CE Collector Emitter Saturation Voltage V 1.5 Vdc CE(sat) (I = 1.0 Adc, I = 2.0 mAdc) C B Base Emitter Saturation Voltage V 2.0 Vdc BE(sat) (I = 1.0 Adc, I = 2.0 mAdc) C B Base Emitter On Voltage V 2.0 Vdc BE(on) (I = 1.0 Adc, V = 5.0 Vdc) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 200 mAdc, V = 5.0 Vdc, f = 100 MHz) C CE CollectorBase Capacitance C 6.0 pF cb (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E 1. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model