X-On Electronics has gained recognition as a prominent supplier of MSA1162GT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MSA1162GT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MSA1162GT1G ON Semiconductor

Hot MSA1162GT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.MSA1162GT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 100 mA 80MHz 200 mW Surface Mount SC-59
Datasheet: MSA1162GT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1677 ea
Line Total: USD 0.17

Availability - 56490
Ship by Mon. 22 Jul to Fri. 26 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
56490
Ship by Mon. 22 Jul to Fri. 26 Jul
MOQ : 1
Multiples : 1
1 : USD 0.1677
10 : USD 0.1065
100 : USD 0.0491
1000 : USD 0.0313
3000 : USD 0.0196
9000 : USD 0.0166
24000 : USD 0.0155
45000 : USD 0.0148

9009
Ship by Fri. 26 Jul to Tue. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 0.1725
10 : USD 0.1104
100 : USD 0.0506
1000 : USD 0.0322
3000 : USD 0.0311
9000 : USD 0.0276
24000 : USD 0.0184
45000 : USD 0.0172

56490
Ship by Mon. 22 Jul to Fri. 26 Jul
MOQ : 45000
Multiples : 1
45000 : USD 0.0148

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the MSA1162GT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MSA1162GT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MSA1162GT1G General Purpose Amplifier Transistors PNP Surface Mount Features MSA1162GT1G TYPICAL ELECTRICAL CHARACTERISTICS 200 1000 1.5 mA 2.0 mA 160 1.0 mA T = 100C A 120 25C 25C 0.5 mA 100 80 I = 0.2 mA B 40 T = 25C A V = 1.0 V CE 0 10 0 1 2 3 4 5 6 1 10 100 1000 V , COLLECTOREMITTER VOLTAGE (V) I , COLLECTOR CURRENT (mA) CE C Figure 1. Collector Saturation Region Figure 2. DC Current Gain 1000 1 I /I = 10 C B T = 100C A T = 100C A 25C 25C 25C 25C 100 0.1 V = 6.0 V CE 10 0.01 1 10 100 1000 1 10 100 1000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 3. DC Current Gain Figure 4. V versus I CE(sat) C 10 10,000 COMMON EMITTER 25C V = 6 V CE T = 100C A 1000 25C 100 1 10 1 T = 25C A I /I = 10 C B 0.1 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 I , COLLECTOR CURRENT (mA) V , BASEEMITTER VOLTAGE (V) C BE Figure 5. V versus I Figure 6. Base Emitter Voltage BE(sat) C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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