MSB92ASWT1G, MSB92AS1WT1G PNP Silicon General Purpose High Voltage Transistor www.onsemi.com This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 COLLECTOR package which is designed for low power surface mount applications. 3 Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 BASE EMITTER MAXIMUM RATINGS (T = 25C) A Rating Symbol Value Unit 3 Collector-Base Voltage V 300 Vdc (BR)CBO 1 Collector-Emitter Voltage V 300 Vdc (BR)CEO 2 Emitter-Base Voltage V 5.0 Vdc (BR)EBO SC70 (SOT323) CASE 419 Collector Current Continuous I 500 mAdc C STYLE 3 ESD Rating: Human Body Model ESD Class 1C Machine Model Class C MARKING DIAGRAM THERMAL CHARACTERISTICS Rating Symbol Max Unit D3 M D5 M Power Dissipation (Note 1) P 150 mW D Junction Temperature T 150 C J 1 1 Storage Temperature Range T 55 to +150 C stg MSB92ASWT1G MSB92AS1WT1G Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Dx = Device Code assumed, damage may occur and reliability may be affected. M = Date Code* 1. Device mounted on a FR-4 glass epoxy printed circuit board using the = PbFree Package minimum recommended footprint. (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping 3000/Tape & Reel MSB92ASWT1G SC70 (PbFree) 3000/Tape & Reel MSB92AS1WT1G SC70 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: June, 2017 Rev. 6 MSB92ASWT1/DMSB92ASWT1G, MSB92AS1WT1G ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage V 300 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B Collector-Base Breakdown Voltage V 300 Vdc (BR)CBO (I = 100 Adc, I = 0) C E Emitter-Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E E Collector-Base Cutoff Current I 0.25 A CBO (V = 300 Vdc, I = 0) CB E EmitterBase Cutoff Current I 0.1 A EBO (V = 3.0 Vdc, I = 0) EB B DC Current Gain (Note 2) (V = 10 Vdc, I = 1.0 mAdc) h 120 200 CE C FE1 (V = 10 Vdc, I = 10 mAdc) h 40 CE C FE2 (V = 10 Vdc, I = 30 mAdc) h 25 CE C FE3 Collector-Emitter Saturation Voltage (Note 2) V 0.5 Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B BaseEmitter Saturation Voltage V 0.9 Vdc BE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B SMALL SIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 50 MHz T (I = 10 mAdc, V = 20 Vdc, f = 20 MHz) C CE CollectorBase Capacitance C 6.0 pF cb (V = 20 Vdc, I = 0, f = 1.0 MHz) CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, D.C. 2%. www.onsemi.com 2