X-On Electronics has gained recognition as a prominent supplier of MSB92T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MSB92T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MSB92T1G ON Semiconductor

MSB92T1G electronic component of ON Semiconductor
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Part No.MSB92T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT SS HV XSTR PNP 300V
Datasheet: MSB92T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2185 ea
Line Total: USD 0.22 
Availability - 13851
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13851
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2185
10 : USD 0.1311
100 : USD 0.0598
1000 : USD 0.0552
3000 : USD 0.038
9000 : USD 0.0333
24000 : USD 0.0242

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MSB92T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MSB92T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MSB92T1G PNP Silicon General Purpose High Voltage Transistor MSB92T1G ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage V 300 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B Collector-Base Breakdown Voltage V 300 Vdc (BR)CBO (I = 100 Adc, I = 0) C E Emitter-Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E E Collector-Base Cutoff Current I 0.25 A CBO (V = 200 Vdc, I = 0) CB E EmitterBase Cutoff Current I 0.1 A EBO (V = 3.0 Vdc, I = 0) EB B DC Current Gain (Note 2) (V = 10 Vdc, I = 1.0 mAdc) h 25 CE C FE1 (V = 10 Vdc, I = 10 mAdc) h 40 CE C FE2 (V = 10 Vdc, I = 30 mAdc) h 25 CE C FE3 Collector-Emitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B BaseEmitter Saturation Voltage V 0.9 Vdc BE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 50 MHz T (I = 10 mAdc, V = 20 Vdc, f = 20 MHz) C CE CollectorBase Capacitance C 6.0 pF cb (V = 20 Vdc, I = 0, f = 1.0 MHz) CB E 2. Pulse Test: Pulse Width 300 s, D.C. 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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