MSD1819A-RT1G, NSVMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount www.onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features SC70 (SOT323) CASE 419 High h , 210460 FE STYLE 3 Low V , < 0.5 V CE(sat) Moisture Sensitivity Level 1 COLLECTOR ESD Protection: 3 Human Body Model > 4000 V Machine Model > 400 V NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 2 Compliant BASE EMITTER MARKING DIAGRAM MAXIMUM RATINGS (T = 25C) A Rating Symbol Value Unit ZR M Collector-Base Voltage V 60 Vdc (BR)CBO Collector-Emitter Voltage V 50 Vdc (BR)CEO 1 Emitter-Base Voltage V 7.0 Vdc (BR)EBO Collector Current Continuous I 100 mAdc ZR = Device Code C M = Date Code* Collector Current Peak I 200 mAdc C(P) = PbFree Package THERMAL CHARACTERISTICS (Note: Microdot may be in either location) Characteristic Symbol Max Unit *Date Code orientation may vary depending upon manufacturing location. Power Dissipation (Note 1) P 150 mW D Junction Temperature T 150 C J ORDERING INFORMATION Storage Temperature Range T 55 to +150 C stg Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MSD1819ART1G SC70 3,000 / assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. NSVMSD1819ART1G SC70 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 Rev. 10 MSD1819ART1/DMSD1819ART1G, NSVMSD1819ART1G ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (I = 2.0 mAdc, I = 0) V 50 Vdc C B (BR)CEO Collector-Base Breakdown Voltage (I = 10 Adc, I = 0) V 60 Vdc C E (BR)CBO Emitter-Base Breakdown Voltage (I = 10 Adc, I = 0) V 7.0 Vdc E E (BR)EBO Collector-Base Cutoff Current (V = 20 Vdc, I = 0) I 0.1 A CB E CBO Collector-Emitter Cutoff Current (V = 10 Vdc, I = 0) I 0.1 A CE B CEO DC Current Gain (Note 2) (V = 10 Vdc, I = 2.0 mAdc) h 210 340 CE C FE1 (V = 2.0 Vdc, I = 100 mAdc) h 90 CE C FE2 Collector-Emitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) 0.5 C B Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, D.C. 2%. 250 0.30 I /I = 10 C B 0.25 200 0.20 150 150C 0.15 100 0.10 25C 55C 50 R = 833C/W JA 0.05 0 0 50 0 50 100 150 0.0001 0.001 0.01 0.1 1 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (A) A C Figure 1. Derating Curve Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 450 150C (10 V) 0.95 I /I = 10 55C C B 400 150C (2 V) 0.85 350 25C 300 0.75 25C (10 V) 250 0.65 25C (2 V) 150C 200 0.55 55C (10 V) 150 55C (2 V) 0.45 100 0.35 50 0 0.25 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 3. DC Current Gain vs. Collector Figure 4. Base Emitter Saturation Voltage vs. Current Collector Current www.onsemi.com 2 h , DC CURRENT GAIN P , POWER DISSIPATION (mW) FE D V , BASEEMITTER SATURA- V , COLLECTOREMITTER BE(sat) CE(sat) TION VOLTAGE (V) SATURATION VOLTAGE (V)