NCP4545IMNTWG ON Semiconductor

V 14 IN BLEED 15 EN 16 SR 17 V 18 IN V IN EN V CC NCP4545 ecoSwitch Advanced Load Management Controlled Load Switch with Low R ON The NCP4545 load switch provides a component and area-reducing solution for efficient power domain switching with inrush current www.onsemi.com limit via soft start. It is designed to integrate control and driver functionality with a high performance low on-resistance power MOSFET in a single device. This cost effective solution is ideal for R TYP V V I ON CC IN MAX power management and hotswap applications requiring low power 4.7 m 5.0 V 1.8 V consumption in a small footprint. 10.5 A 5.9 m 3.3 V 5.0 V Features Advanced Controller with Charge Pump MARKING Integrated NChannel MOSFET DIAGRAM SoftStart via Adjustable Slew Rate Control 1 1 NCP Low OnResistance QFN18, 3x3 4545x Input Voltage Range 0.5 V to 6 V CASE 485BF ALYW Low Standby Current Load Bleed Function x = Blank for EN ActiveHigh = L for EN ActiveLow No External Components Required A = Assembly Location Enable Pin with CMOS Input Levels L = Wafer Lot This is a PbFree Device Y = Year W = Work Week Typical Applications = PbFree Package Notebook and Tablet Computers Handheld Electronics PIN CONFIGURATION Digital Cameras Portable Medical Devices Hard Drives Peripheral Ports V DELAY 1 13 IN Controller 3 V 5.5 V 0.5 V 6 V V 2 12 CC V IN 19: V IN 11 3 V GND IN 10 V 4 V IN IN Bandgap & Biases Delay and Charge Slew Rate Pump Control (Top View) RC Oscillator ORDERING INFORMATION See detailed ordering and shipping information on page 10 of this data sheet. Load Figure 1. Typical Application No external components included Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2016 Rev. 2 NCP4545/D DELAY SR GND BLEED V OUT V 5 IN V 6 OUT 7 V OUT V 8 OUT V 9 INNCP4545 PIN DESCRIPTION Pin Name Function 1 DELAY Turnon delay adjustment 2 V Supply voltage to controller (3.0 V 5.5 V) CC 3 GND Controller ground 4, 5, 914, 18, 19 V Drain of MOSFET (0.5 V 6.0 V) IN 68 V Source of MOSFET connected to load OUT 15 BLEED Load bleed connection 16 EN NCP4545IMNTWG ActiveHigh digital input used to turn on the MOSFET, pin has an internal pull down resistor to GND NCP4545IMNTWGL ActiveLow digital input used to turn on the MOSFET, pin has an internal pull up resistor to V CC 17 SR Slew rate adjustment ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage Range V 0.3 to 6 V CC Input Voltage Range V 0.3 to 6 V IN Output Voltage Range V 0.3 to 6 V OUT EN Digital Input Range V 0.3 to (V + 0.3) V EN CC Thermal Resistance, JunctiontoAir (Note 1) R 49.9 C/W JA Thermal Resistance, JunctiontoAir (Note 2) R 32.8 C/W JA Thermal Resistance, JunctiontoCase (V Paddle) 3.3 C/W R IN JC Continuous MOSFET Current (Note 3) I 10.5 A MAX Total Power Dissipation T = 25C (Notes 1 and 4) P 1.30 W A D Derate above T = 25C 20.1 mW/C A Total Power Dissipation T = 25C (Notes 2 and 4) P 1.98 W A D Derate above T = 25C 30.5 mW/C A Storage Temperature Range T 40 to 150 C STG Lead Temperature, Soldering (10 sec.) T 260 C SLD ESD Capability, Human Body Model (Notes 5 and 6) ESD 4.0 kV HBM ESD Capability, Machine Model (Note 5) ESD 200 V MM ESD Capability, Charged Device Model (Note 5) ESD 1 kV CDM Latchup Current Immunity (Note 5) LU 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 2. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 3. Current limited by package. is never exceeded. 4. Specified for derating purposes only, ensure that I MAX 5. Tested by the following methods T = 25C: A ESD Human Body Model tested per AECQ100002 (EIA/JESD22A114) ESD Machine Model tested per EIA/JESD22A115 ESD Charged Device Model per EIA/JESD22C101 Latchup Current Maximum Rating: 100 mA per JEDEC standard: JESD78 6. Rating is for all pins except for V and V which are tied to the internal MOSFETs Drain and Source. Typical MOSFET ESD performance IN OUT for V and V should be expected and these devices should be treated as ESD sensitive. IN OUT www.onsemi.com 2