ecoSWITCH Advanced Load Management Controlled Load Switch with Low R ON NCP45520, NCP45521 The NCP4552x series of load switches provide a component and area-reducing solution for efficient power domain switching with www.onsemi.com inrush current limit via soft start. In addition to integrated control functionality with ultra low onresistance, these devices offer system safeguards and monitoring via fault protection and power good R TYP V V I * ON CC IN MAX DC signaling. This cost effective solution is ideal for power management and hot-swap applications requiring low power consumption in a 9.5 m 3.3 V 1.8 V small footprint. 10.1 m 3.3 V 5.0 V 10.5 A 12.8 m 3.3 V 12 V Features Advanced Controller with Charge Pump *I is defined as the maximum steady state MAX DC current the load switch can pass at room ambient Integrated N-Channel MOSFET with Low R ON temperature without entering thermal lockout. Input Voltage Range 0.5 V to 13.5 V Soft-Start via Controlled Slew Rate Adjustable Slew Rate Control (NCP45521) Power Good Signal (NCP45520) 1 Thermal Shutdown DFN8, 2x2 CASE 506CC Undervoltage Lockout Short-Circuit Protection MARKING DIAGRAM Extremely Low Standby Current Load Bleed (Quick Discharge) 1 XX M This is a PbFree Device Typical Applications XX = PH for NCP45520H Portable Electronics and Systems = PL for NCP45520L Notebook and Tablet Computers = SH for NCP45521H Telecom, Networking, Medical, and Industrial Equipment = SL for NCP45521L M = Date Code SetTop Boxes, Servers, and Gateways = PbFree Package Hot Swap Devices and Peripheral Ports (Note: Microdot may be in either location) V V EN PG* CC IN PIN CONFIGURATION Thermal, Bandgap Undervoltage Control V 1 8 V IN OUT & & Logic Biases ShortCircuit Protection 2 EN 7 V OUT 9: V IN 3 V 6 PG or SR CC Delay and Charge Slew Rate Pump Control GND 4 5 BLEED (Top View) GND SR* BLEED V OUT ORDERING INFORMATION Figure 1. Block Diagram See detailed ordering and shipping information on page 14 of (*Note: either PG or SR available for each part) this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: March, 2020 Rev. 5 NCP45520/DNCP45520, NCP45521 Table 1. PIN DESCRIPTION Pin Name Function 1, 9 V Drain of MOSFET (0.5 V 13.5 V), Pin 1 must be connected to Pin 9 IN 2 EN NCP45520H & NCP45521H Activehigh digital input used to turn on the MOSFET, pin has an internal pull down resistor to GND NCP45520L & NCP45521L Activelow digital input used to turn on the MOSFET, pin has an internal pull up resistor to V CC 3 V Supply voltage to controller (3.0 V 5.5 V) CC 4 GND Controller ground 5 BLEED Load bleed connection, must be tied to V either directly or through a resistor 1 k OUT 6 PG NCP45520 Activehigh, opendrain output that indicates when the gate of the MOSFET is fully charged, external pull up resistor 1 k to an external voltage source required tie to GND if not used SR NCP45521 Slew rate adjustment float if not used 7, 8 V Source of MOSFET connected to load OUT Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage Range V 0.3 to 6 V CC Input Voltage Range V 0.3 to 18 V IN Output Voltage Range V 0.3 to 18 V OUT EN Digital Input Range V 0.3 to (V + 0.3) V EN CC PG Output Voltage Range (Note 1) V 0.3 to 6 V PG Thermal Resistance, JunctiontoAmbient, Steady State (Note 2) 40.0 C/W R JA Thermal Resistance, JunctiontoAmbient, Steady State (Note 3) R 72.7 C/W JA Thermal Resistance, JunctiontoCase (V Paddle) R 5.3 C/W IN JC Continuous MOSFET Current T = 25C (Notes 2 and 4) I 10.5 A A MAX Continuous MOSFET Current T = 25C (Notes 3 and 4) I 7.8 A A MAX Transient MOSFET Current (for up to 500 s) I 24 A MAX TRANS Total Power Dissipation T = 25C (Note 2) P 2.50 W A D Derate above T = 25C 24.9 mW/C A Total Power Dissipation T = 25C (Note 3) P 1.37 W A D Derate above T = 25C 13.8 mW/C A Storage Temperature Range T 40 to 150 C STG Lead Temperature, Soldering (10 sec.) T 260 C SLD ESD Capability, Human Body Model (Notes 5 and 6) ESD 3.0 kV HBM ESD Capability, Machine Model (Note 5) ESD 200 V MM ESD Capability, Charged Device Model (Note 5) ESD 1.0 kV CDM Latchup Current Immunity (Notes 5 and 6) LU 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. NCP45520 only. PG is an opendrain output that requires an external pull up resistor 1 k to an external voltage source. 2. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 3. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 4. Ensure that the expected operating MOSFET current will not cause the ShortCircuit Protection to turn the MOSFET off undesirably. 5. Tested by the following methods T = 25C: A ESD Human Body Model tested per JESD22A114 ESD Machine Model tested per JESD22A115 ESD Charged Device Model tested per JESD22C101 Latchup Current tested per JESD78 6. Rating is for all pins except for V and V which are tied to the internal MOSFETs Drain and Source. Typical MOSFET ESD performance IN OUT for V and V should be expected and these devices should be treated as ESD sensitive. IN OUT www.onsemi.com 2