NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for highgain audio amplifier and power switching NJD1718, NJVNJD1718 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) BV Vdc CEO (I = 10 mAdc, I = 0) 50 C B Collector Cutoff Current I nAdc CBO (V = 50 Vdc, I = 0) 100 CB E Emitter Cutoff Current (V = 5 Vdc, I = 0) I 100 nAdc BE C EBO ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 0.5 A, V = 2 V) 70240 C CE (I = 1.5 Adc, V = 2 Vdc) 40 C CE CollectorEmitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 1 A, I = 0.05 A) 0.2 0.5 C B BaseEmitter Saturation Voltage (Note 3) V Vdc BE(sat) (I = 1 A, I = 0.05 Adc) 1.2 C B BaseEmitter On Voltage (Note 3) V Vdc BE(on) (I = 1 Adc, V = 2 Vdc) 1.2 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) f MHz T (I = 500 mAdc, V = 2 Vdc, f = 10 MHz) 80 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 33 CB E Switching Timers t 55 ns ON V = 30 V, I = 1 A CC C t 320 STG t 40 f 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 4. f = h f . T fe test