X-On Electronics has gained recognition as a prominent supplier of NJD2873T4G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NJD2873T4G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NJD2873T4G ON Semiconductor

NJD2873T4G electronic component of ON Semiconductor
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See Product Specifications
Part No.NJD2873T4G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT 2A 50V 12.5W NPN
Datasheet: NJD2873T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.1888 ea
Line Total: USD 472 
Availability - 4850
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
4850
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.1888
5000 : USD 0.1859
7500 : USD 0.1831
10000 : USD 0.1804
25000 : USD 0.1776
50000 : USD 0.175
100000 : USD 0.1724

9700
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.2071

1903
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.444
10 : USD 0.3613
30 : USD 0.3199
100 : USD 0.2891
500 : USD 0.264
1000 : USD 0.2516

4850
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.2552
5000 : USD 0.2513
7500 : USD 0.2476
10000 : USD 0.2439
25000 : USD 0.2401

9700
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.2071

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the NJD2873T4G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NJD2873T4G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for highgain audio amplifier applications. www.onsemi.com Features High DC Current Gain SILICON Low CollectorEmitter Saturation Voltage POWER TRANSISTORS High CurrentGain Bandwidth Product 2 AMPERES Epoxy Meets UL 94 V0 0.125 in 50 VOLTS NJV Prefix for Automotive and Other Applications Requiring 15 WATTS Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2,4 Compliant 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 3 CollectorBase Voltage V 50 Vdc CB EMITTER CollectorEmitter Voltage V 50 Vdc CEO EmitterBase Voltage V 5 Vdc EB 4 Collector Current Continuous I 2 Adc C 1 2 Collector Current Peak I 3 Adc CM 3 Base Current I 0.4 Adc B DPAK CASE 369C Total Device Dissipation P D STYLE 1 T = 25C 15 W C Derate above 25C 0.1 W/C MARKING DIAGRAM Total Device Dissipation P D T = 25C* 1.68 W A Derate above 25C 0.011 W/C AYWW J Operating and Storage Junction T , T 65 to +175 C J stg Temperature Range 2873G ESD Human Body Model HBM 3B V A = Assembly Location ESD Machine Model MM C V Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the WW = Work Week device. If any of these limits are exceeded, device functionality should not be G = PbFree Device assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NJD2873T4G DPAK 2,500 (PbFree) Units / Reel NJVNJD2873T4G DPAK 2,500 (PbFree) Units / Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: January, 2017 Rev. 18 NJD2873T4/DNJD2873 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance C/W JunctiontoCase R 10 JC JunctiontoAmbient (Note 1) R 89.3 JA 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V Vdc CEO(sus) (I = 10 mAdc, I = 0) 50 C B Collector Cutoff Current I nAdc CBO (V = 50 Vdc, I = 0) 100 CB E Emitter Cutoff Current (V = 5 Vdc, I = 0) I 100 nAdc BE C EBO ON CHARACTERISTICS DC Current Gain (Note 2) h FE (I = 0.5 A, V = 2 V) C CE 120 360 (I = 2 Adc, V = 2 Vdc) C CE 40 (I = 0.75 Adc, V = 1.6 Vdc, 40C T 150C) C CE J 80 360 CollectorEmitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 1 A, I = 0.05 A) C B 0.3 BaseEmitter Saturation Voltage (Note 2) (I = 1 A, I = 0.05 Adc) V 1.2 Vdc C B BE(sat) BaseEmitter On Voltage (Note 2) V Vdc BE(on) (I = 1 Adc, V = 2 Vdc) 1.2 C CE (I = 0.75 Adc, V = 1.6 Vdc, 40C T 150C) 0.95 C CE J DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 3) f MHz T (I = 100 mAdc, V = 10 Vdc, f = 10 MHz) 65 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 80 CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 3. f = h f . T fe test www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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