NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance C/W Junction toCase 2.78 R JC Junction toAmbient 71.4 R JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V V CEO(sus) (I = 10 mA, L = 10 mH) 350 C Collector Cutoff Current (V = 500 V) I 50 A CE CES (I = 0) (V = 500 V, T = 125C) 250 B CE C Collector Cutoff Current (V = 250 V) I 50 A CE CEO (I = 0) (V = 200 V, T = 125C) 250 B CE C Emitter Cutoff Current (V = 5.0 Vdc) I 5.0 A BE EBO ON CHARACTERISTICS CollectorEmitter Saturation Voltage V V CE(sat) (I = 2.0 A, I = 20 mA) 1.5 C B (I = 2.0 A, I = 20 mA 125C) 1.5 C B BaseEmitter Saturation Voltage V V BE(sat) (I = 2.0 A, I = 20 mA) 2.0 C B (I = 2.0 A, I = 20 mA 125C) 2.0 C B BaseEmitter On Voltage V V BE(on) (I = 2.0 A, V = 2.0 V) 2.0 C CE (I = 2.0 A, V = 2.0 V 125C) 2.0 C CE DC Current Gain h FE (I = 2.0 A, V = 2.0 V) C CE 2000 (I = 4.0 A, V = 2.0 Vdc) C CE 300 DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 2.0 A, V = 10 V, f = 1.0 MHz) 90 C CE Output Capacitance C pF ob (V = 10 V, I = 0, f = 0.1 MHz) 60 CB E SWITCHING CHARACTERISTICS V = 12 V, V = 250 V, L = 4 mH t 18 Sec CC clamp s I = 2 A, I = 20 mA, I = 20 mA t 0.8 C B1 B2 f C B E 2 K Figure 1. Darlington Circuit Schematic