NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon NJT4031N, NJV4031NT1G, NJV4031NT3G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 10 mAdc, I = 0 Adc) 40 C B EmitterBase Voltage V Vdc EBO (I = 50 Adc, I = 0 Adc) 6.0 E C Collector Cutoff Current I nAdc CBO (V = 40 Vdc) 100 CB Emitter Cutoff Current I nAdc EBO (V = 6.0 Vdc) 100 BE ON CHARACTERISTICS (Note 3) CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 0.5 Adc, I = 5.0 mAdc) 0.100 C B (I = 1.0 Adc, I = 10 mAdc) 0.150 C B (I = 3.0 Adc, I = 0.3 Adc) 0.300 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 1.0 Adc, I = 0.1 Adc) 1.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.0 Adc, V = 2.0 Vdc) 1.0 C CE DC Current Gain h FE (I = 0.5 Adc, V = 1.0 Vdc) 220 C CE (I = 1.0 Adc, V = 1.0 Vdc) 200 500 C CE (I = 3.0 Adc, V = 1.0 Vdc) 100 C CE DYNAMIC CHARACTERISTICS Output Capacitance C pF ob (V = 10 Vdc, f = 1.0 MHz) 25 CB Input Capacitance C pF ib (V = 5.0 Vdc, f = 1.0 MHz) 170 EB CurrentGain Bandwidth Product (Note 4) f MHz T (I = 500 mA, V = 10 V, F = 1.0 MHz) 215 C CE test 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. f = h f T FE test 2.5 2.0 T C 1.5 1.0 T A 0.5 0 25 50 75 100 125 150 T , TEMPERATURE (C) J Figure 1. Power Derating