Bipolar Power Transistors PNP Silicon NJT4030P, NJV4030P Features Epoxy Meets UL 94, V0 0.125 in NJV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable PNP TRANSISTOR These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3.0 AMPERES Compliant 40 VOLTS, 2.0 WATTS MAXIMUM RATINGS (T = 25C unless otherwise noted) C COLLECTOR 2,4 Rating Symbol Value Unit CollectorEmitter Voltage V 40 Vdc BASE CEO 1 CollectorBase Voltage V 40 Vdc CB EmitterBase Voltage V 6.0 Vdc EB EMITTER 3 Base Current Continuous I 1.0 Adc B MARKING Collector Current Continuous I 3.0 Adc C DIAGRAM Collector Current Peak I 5.0 Adc CM 4 SOT223 AYW ESD Human Body Model HBM 3B V 1 CASE 318E 4030P 2 STYLE 1 3 ESD Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the 1 device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y Year W = Work Week THERMAL CHARACTERISTICS 4030P = Specific Device Code Characteristic Symbol Max Unit = PbFree Package (Note: Microdot may be in either location) Total Power Dissipation P W D Total P T = 25C (Note 1) 2.0 D A Total P T = 25C (Note 2) 0.80 D A ORDERING INFORMATION Thermal Resistance C/W JunctiontoCase R 11 JC Device Package Shipping JunctiontoAmbient (Note 1) R 64 JA JunctiontoAmbient (Note 2) R 155 JA NJT4030PT1G SOT223 1000 / Tape & (PbFree) Reel Maximum Lead Temperature for Soldering T 260 C L NJV4030PT1G Purposes, 1/8 from case for 5 seconds NJT4030PT3G SOT223 4000 / Tape & Operating and Storage Junction T , T 55 to C J stg (PbFree) Reel Temperature Range +150 NJV4030PT3G 1. Mounted on 1 sq. (645 sq. mm) Collector pad on FR4 bd material. For information on tape and reel specifications, 2. Mounted on 0.012 sq. (7.6 sq. mm) Collector pad on FR 4 bd material. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: February, 2021 Rev. 7 NJT4030P/DNJT4030P, NJV4030P ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 10 mAdc, I = 0 Adc) 40 C B EmitterBase Voltage V Vdc EBO (I = 50 Adc, I = 0 Adc) 6.0 E C Collector Cutoff Current I nAdc CBO (V = 40 Vdc) 100 CB Emitter Cutoff Current I nAdc EBO (V = 6.0 Vdc) 100 BE ON CHARACTERISTICS (Note 3) CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 0.5 Adc, I = 5.0 mAdc) 0.150 C B (I = 1.0 Adc, I = 10 mAdc) 0.200 C B (I = 3.0 Adc, I = 0.3 Adc) 0.500 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 1.0 Adc, I = 0.1 Adc) 1.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.0 Adc, V = 2.0 Vdc) 1.0 C CE DC Current Gain h FE (I = 0.5 Adc, V = 1.0 Vdc) 220 C CE (I = 1.0 Adc, V = 1.0 Vdc) 200 400 C CE (I = 3.0 Adc, V = 1.0 Vdc) 100 C CE DYNAMIC CHARACTERISTICS Output Capacitance C pF ob (V = 10 Vdc, f = 1.0 MHz) 40 CB Input Capacitance C pF ib (V = 5.0 Vdc, f = 1.0 MHz) 130 EB CurrentGain Bandwidth Product (Note 4) f MHz T (I = 500 mA, V = 10 V, F = 1.0 MHz) 160 C CE test Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. f = h f T FE test 2.5 2.0 T C 1.5 1.0 T A 0.5 0 25 50 75 100 125 150 T , TEMPERATURE (C) J Figure 1. Power Derating www.onsemi.com 2 P , POWER DISSIPATION (W) D