X-On Electronics has gained recognition as a prominent supplier of NJVMJD243T4G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NJVMJD243T4G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NJVMJD243T4G ON Semiconductor

NJVMJD243T4G electronic component of ON Semiconductor
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Part No.NJVMJD243T4G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT BIP NPN 4A 100V TR
Datasheet: NJVMJD243T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4808 ea
Line Total: USD 0.48 
Availability - 1637
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1637
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4808
10 : USD 0.4232
30 : USD 0.3946
100 : USD 0.3658
500 : USD 0.3487
1000 : USD 0.339

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NJVMJD243T4G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NJVMJD243T4G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJD243 (NPN), MJD253 (PNP) Complementary Silicon Plastic Power Transistors DPAK3 for Surface Mount Applications www.onsemi.com Designed for low voltage, lowpower, highgain audio amplifier applications. 4.0 A, 100 V, 12.5 W Features POWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY (No Suffix) COLLECTOR COLLECTOR Straight Lead Version in Plastic Sleeves (1 Suffix) 2, 4 2, 4 Low CollectorEmitter Saturation Voltage High CurrentGain Bandwidth Product 1 1 Annular Construction for Low Leakage BASE BASE Epoxy Meets UL 94 V0 0.125 in 3 3 NJV Prefix for Automotive and Other Applications Requiring EMITTER EMITTER Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 4 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 4 MAXIMUM RATINGS 1 2 1 2 Rating Symbol Value Unit 3 3 CollectorBase Voltage V 100 Vdc CB IPAK DPAK3 CASE 369D CASE 369C CollectorEmitter Voltage V 100 Vdc CEO STYLE 1 STYLE 1 EmitterBase Voltage V 7.0 Vdc EB Collector Current Continuous I 4.0 Adc C MARKING DIAGRAMS Collector Current Peak I 8.0 Adc CM Base Current I 1.0 Adc B Total Device Dissipation P D AYWW AYWW T = 25C 12.5 W C J253G J2x3G Derate above 25C 0.1 W/C Total Device Dissipation P D T = 25C (Note 2) 1.4 W A IPAK DPAK Derate above 25C 0.011 W/C Operating and Storage Junction T , T 65 to +150 C J stg A = Assembly Location Temperature Range Y = Year ESD Human Body Model HBM 3B V WW = Work Week x = 4 or 5 ESD Machine Model MM C V G = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. When surface mounted on minimum pad sizes recommended. See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: September, 2016 Rev. 17 MJD243/DMJD243 (NPN), MJD253 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance C/W JunctiontoCase R 10 JC JunctiontoAmbient (Note 2) 89.3 R JA 2. When surface mounted on minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) (I = 10 mAdc, I = 0) 100 C B Collector Cutoff Current I CBO (V = 100 Vdc, I = 0) 100 nAdc CB E (V = 100 Vdc, I = 0, T = 125C) 100 Adc CB E J Emitter Cutoff Current I nAdc EBO (V = 7.0 Vdc, I = 0) 100 BE C DC Current Gain (Note 3) h FE (I = 200 mAdc, V = 1.0 Vdc) 40 180 C CE (I = 1.0 Adc, V = 1.0 Vdc) 15 C CE CollectorEmitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) C B 0.3 (I = 1.0 Adc, I = 100 mAdc) C B 0.6 BaseEmitter Saturation Voltage (Note 3) V Vdc BE(sat) (I = 2.0 Adc, I = 200 mAdc) 1.8 C B BaseEmitter On Voltage (Note 3) V Vdc BE(on) (I = 500 mAdc, V = 1.0 Vdc) 1.5 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) f MHz T (I = 100 mAdc, V = 10 Vdc, f = 10 MHz) 40 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 50 CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 4. f = h f . T FE test www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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