MJD243 (NPN), MJD253 (PNP) Complementary Silicon Plastic Power Transistors DPAK3 for Surface Mount Applications www.onsemi.com Designed for low voltage, lowpower, highgain audio amplifier applications. 4.0 A, 100 V, 12.5 W Features POWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY (No Suffix) COLLECTOR COLLECTOR Straight Lead Version in Plastic Sleeves (1 Suffix) 2, 4 2, 4 Low CollectorEmitter Saturation Voltage High CurrentGain Bandwidth Product 1 1 Annular Construction for Low Leakage BASE BASE Epoxy Meets UL 94 V0 0.125 in 3 3 NJV Prefix for Automotive and Other Applications Requiring EMITTER EMITTER Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 4 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 4 MAXIMUM RATINGS 1 2 1 2 Rating Symbol Value Unit 3 3 CollectorBase Voltage V 100 Vdc CB IPAK DPAK3 CASE 369D CASE 369C CollectorEmitter Voltage V 100 Vdc CEO STYLE 1 STYLE 1 EmitterBase Voltage V 7.0 Vdc EB Collector Current Continuous I 4.0 Adc C MARKING DIAGRAMS Collector Current Peak I 8.0 Adc CM Base Current I 1.0 Adc B Total Device Dissipation P D AYWW AYWW T = 25C 12.5 W C J253G J2x3G Derate above 25C 0.1 W/C Total Device Dissipation P D T = 25C (Note 2) 1.4 W A IPAK DPAK Derate above 25C 0.011 W/C Operating and Storage Junction T , T 65 to +150 C J stg A = Assembly Location Temperature Range Y = Year ESD Human Body Model HBM 3B V WW = Work Week x = 4 or 5 ESD Machine Model MM C V G = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. When surface mounted on minimum pad sizes recommended. See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: September, 2016 Rev. 17 MJD243/DMJD243 (NPN), MJD253 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance C/W JunctiontoCase R 10 JC JunctiontoAmbient (Note 2) 89.3 R JA 2. When surface mounted on minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) (I = 10 mAdc, I = 0) 100 C B Collector Cutoff Current I CBO (V = 100 Vdc, I = 0) 100 nAdc CB E (V = 100 Vdc, I = 0, T = 125C) 100 Adc CB E J Emitter Cutoff Current I nAdc EBO (V = 7.0 Vdc, I = 0) 100 BE C DC Current Gain (Note 3) h FE (I = 200 mAdc, V = 1.0 Vdc) 40 180 C CE (I = 1.0 Adc, V = 1.0 Vdc) 15 C CE CollectorEmitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) C B 0.3 (I = 1.0 Adc, I = 100 mAdc) C B 0.6 BaseEmitter Saturation Voltage (Note 3) V Vdc BE(sat) (I = 2.0 Adc, I = 200 mAdc) 1.8 C B BaseEmitter On Voltage (Note 3) V Vdc BE(on) (I = 500 mAdc, V = 1.0 Vdc) 1.5 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) f MHz T (I = 100 mAdc, V = 10 Vdc, f = 10 MHz) 40 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 50 CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 4. f = h f . T FE test www.onsemi.com 2