MJD2955 (PNP), MJD3055 (NPN) Complementary Power Transistors DPAK for Surface Mount Applications MJD2955 (PNP), MJD3055 (NPN) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 6.25 C/W JC Thermal Resistance, JunctiontoAmbient (Note 2) R 71.4 C/W JA 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) (I = 30 mAdc, I = 0) 60 C B Collector Cutoff Current I Adc CEO (V = 30 Vdc, I = 0) 50 CE B Collector Cutoff Current I mAdc CEX (V = 70 Vdc, V = 1.5 Vdc) CE EB(off) 0.02 (V = 70 Vdc, V = 1.5 Vdc, T = 150 C) CE EB(off) C 2 Collector Cutoff Current I mAdc CBO (V = 70 Vdc, I = 0) CB E 0.02 (V = 70 Vdc, I = 0, T = 150 C) CB E C 2 Emitter Cutoff Current I mAdc EBO (V = 5 Vdc, I = 0) 0.5 BE C ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 4 Adc, V = 4 Vdc) C CE 20 100 (I = 10 Adc, V = 4 Vdc) C CE 5 CollectorEmitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 4 Adc, I = 0.4 Adc) C B 1.1 (I = 10 Adc, I = 3.3 Adc) C B 8 BaseEmitter On Voltage (Note 3) V Vdc BE(on) (I = 4 Adc, V = 4 Vdc) 1.8 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 500 mAdc, V = 10 Vdc, f = 500 kHz) 2 C CE 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.