MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves (1 Suffix) 3 AMPERES Lead Formed Version in 16 mm Tape and Reel (T4 Suffix) 40 AND 100 VOLTS Electrically Similar to Popular TIP31 and TIP32 Series 15 WATTS Epoxy Meets UL 94, V0 0.125 in NJV Prefix for Automotive and Other Applications Requiring COMPLEMENTARY Unique Site and Control Change Requirements AECQ101 COLLECTOR COLLECTOR Qualified and PPAP Capable 2,4 2,4 These Devices are PbFree and are RoHS Compliant 1 1 MAXIMUM RATINGS BASE BASE Rating Symbol Max Unit CollectorEmitter Voltage V Vdc 3 3 CEO MJD31, MJD32 40 EMITTER EMITTER MJD31C, MJD32C 100 CollectorBase Voltage V Vdc CB 4 MJD31, MJD32 40 MJD31C, MJD32C 100 4 EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 3.0 Adc C 1 2 1 2 3 Collector Current Peak I 5.0 Adc CM 3 Base Current I 1.0 Adc B DPAK IPAK CASE 369C CASE 369D Total Power Dissipation P W D STYLE 1 STYLE 1 T = 25C 15 W/C C 0.12 Derate above 25C MARKING DIAGRAMS Total Power Dissipation P W D 1.56 T = 25C W/C A 0.012 Derate above 25C Operating and Storage Junction Temperature T , T 65 to C J stg YWW AYWW Range +150 J3xxG J3xxG ESD Human Body Model HBM 3B V ESD Machine Model MM C V DPAK IPAK Stresses exceeding those listed in the Maximum Ratings table may damage A = Site Code the device. If any of these limits are exceeded, device functionality should not Y = Year be assumed, damage may occur and reliability may be affected. WW = Work Week xx = 1, 1C, 2, or 2C THERMAL CHARACTERISTICS G = PbFree Package Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 8.3 C/W JC ORDERING INFORMATION Thermal Resistance, JunctiontoAmbient* R 80 C/W JA See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Lead Temperature for Soldering Purposes T 260 C L *These ratings are applicable when surface mounted on the minimum pad sizes recommended. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: September, 2016 Rev. 16 MJD31/DMJD31 (NPN), MJD32 (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 30 mAdc, I = 0) C B MJD31, MJD32 40 MJD31C, MJD32C 100 I Adc Collector Cutoff Current CEO (V = 40 Vdc, I = 0) CE B 50 MJD31, MJD32 (V = 60 Vdc, I = 0) CE B 50 MJD31C, MJD32C ICES Adc Collector Cutoff Current 20 (V = Rated V , V = 0) CE CEO EB Emitter Cutoff Current I mAdc EBO 1 (V = 5 Vdc, I = 0) BE C ON CHARACTERISTICS (Note 1) h DC Current Gain FE (I = 1 Adc, V = 4 Vdc) 25 C CE (I = 3 Adc, V = 4 Vdc) 10 50 C CE V Vdc CollectorEmitter Saturation Voltage CE(sat) 1.2 (I = 3 Adc, I = 375 mAdc) C B BaseEmitter On Voltage V Vdc BE(on) 1.8 (I = 3 Adc, V = 4 Vdc) C CE DYNAMIC CHARACTERISTICS f MHz Current Gain Bandwidth Product (Note 2) T 3 (I = 500 mAdc, V = 10 Vdc, f = 1 MHz) C CE test h SmallSignal Current Gain fe 20 (I = 0.5 Adc, V = 10 Vdc, f = 1 kHz) C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. f = h f . T fe test www.onsemi.com 2