X-On Electronics has gained recognition as a prominent supplier of NJW0281G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NJW0281G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NJW0281G ON Semiconductor

NJW0281G electronic component of ON Semiconductor
NJW0281G ON Semiconductor
NJW0281G Bipolar Transistors - BJT
NJW0281G  Semiconductors

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See Product Specifications
Part No. NJW0281G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 150W
Datasheet: NJW0281G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 2.5125 ea
Line Total: USD 75.38 
Availability - 873
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 30  Multiples: 30
Pack Size: 30
Availability Price Quantity
873
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 30
Multiples : 30
30 : USD 2.5125
120 : USD 2.1
270 : USD 1.9125
510 : USD 1.775
1020 : USD 1.725
2520 : USD 1.675
5010 : USD 1.6625

21
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 4.3123
10 : USD 2.8638
30 : USD 2.3766
90 : USD 2.0803
510 : USD 1.9454
990 : USD 1.8873

217
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 3.57
7 : USD 2.604
19 : USD 2.464
120 : USD 2.38

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the NJW0281G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NJW0281G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With NJW0281G (NPN) NJW0302G (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase R 0.83 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 250 V CEO(sus) (I = 30 mA, I = 0) C B Collector Cutoff Current I 10 A CBO (V = 250 V, I = 0) CB E Emitter Cutoff Current I 5.0 A EBO (V = 5.0 V, I = 0) EB C ON CHARACTERISTICS DC Current Gain h FE (I = 0.5 A, V = 5.0 V) 75 150 C CE (I = 1.0 A, V = 5.0 V) 75 150 C CE (I = 3.0 A, V = 5.0 V) 75 150 C CE CollectorEmitter Saturation Voltage V 1.0 V CE(sat) (I = 5.0 A, I = 0.5 A) C B BaseEmitter On Voltage V 1.2 V BE(on) (I = 5.0 A, V = 5.0 V) C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 30 MHz T (I = 1.0 A, V = 5.0 V, f = 1.0 MHz) C CE test Output Capacitance C 400 pF ob (V = 10 V, I = 0, f = 1.0 MHz) CB E test 160 100 140 1.0 ms 10 5.0 ms 120 10 ms 100 100 ms 1 80 DC 60 0.1 40 20 0 0.01 0 20 40 60 80 100 120 140 160 1 10 100 1000 T , CASE TEMPERATURE (C) C V , COLLECTOREMITTER VOLTAGE (V) CE Figure 1. Power Derating Figure 2. Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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