X-On Electronics has gained recognition as a prominent supplier of NJW0302G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NJW0302G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NJW0302G ON Semiconductor

Name: NJW0302G
Brand: ON Semiconductor
SKU: NJW0302G_ON_Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

NJW0302G electronic component of ON Semiconductor

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See Product Specifications

Part No.	NJW0302G
Manufacturer:	ON Semiconductor
Category:	Bipolar Transistors - BJT
Description:	Transistors Bipolar - BJT 150W
Datasheet:	NJW0302G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

30: USD 2.4125 ea
Line Total: USD 72.38

Availability - 989
Ship by Thu. 06 Mar to Wed. 12 Mar

MOQ: 30 Multiples: 30
Pack Size: 30

NJW0302G More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

989

Ship by Thu. 06 Mar to Wed. 12 Mar

MOQ : 30
Multiples : 30

30 : USD 2.4125
120 : USD 2.1375
270 : USD 1.925
510 : USD 1.8
1020 : USD 1.675
2520 : USD 1.6625
5010 : USD 1.65

452

Ship by Thu. 13 Mar to Tue. 18 Mar

MOQ : 1
Multiples : 1

1 : USD 4.4315
10 : USD 2.9785
30 : USD 2.2884
90 : USD 2.0069
510 : USD 1.88
990 : USD 1.824

77

Ship by Tue. 04 Mar to Thu. 06 Mar

MOQ : 1
Multiples : 1

1 : USD 3.584
7 : USD 2.618
19 : USD 2.478
120 : USD 2.38

Specifications

Manufacturer

ON Semiconductor ON Semiconductor

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

RoHS - XON

Y Y

Mounting Style

Through Hole Through Hole

Package / Case

TO - 3P TO - 3P

Transistor Polarity

Pnp Pnp

Configuration

Single Single

Maximum DC Collector Current

15 A 15 A

Collector- Emitter Voltage VCEO Max

250 V 250 V

Collector- Base Voltage VCBO

250 V 250 V

Emitter- Base Voltage VEBO

5 V 5 V

Collector-Emitter Saturation Voltage

1 V 1 V

Pd - Power Dissipation

150000 mW 150000 mW

Gain Bandwidth Product fT

30 Mhz 30 Mhz

Minimum Operating Temperature

- 65 C - 65 C

Maximum Operating Temperature

+ 150 C + 150 C

Series

Njw0302 Njw0302

Packaging

Tube Tube

Dc Current Gain Hfe Max

75 75

Brand

On Semiconductor On Semiconductor

Dc Collector/Base Gain Hfe Min

75 75

Maximum Power Dissipation

150000 mW 150000 mW

Factory Pack Quantity :

30 30

Height

18.7 mm 18.7 mm

Length

15.6 mm 15.6 mm

Cnhts

8541210000 8541210000

Hts Code

8541290075 8541290075

Mxhts

85412999 85412999

Product Type

Bjts - Bipolar Transistors Bjts - Bipolar Transistors

Subcategory

Transistors Transistors

Taric

8541290000 8541290000

Category

Bipolar Transistors - Bjt Bipolar Transistors - Bjt

Brand Category

ON Semiconductor ON Semiconductor

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We are delighted to provide the NJW0302G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NJW0302G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With NJW0281G (NPN) NJW0302G (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase R 0.83 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 250 V CEO(sus) (I = 30 mA, I = 0) C B Collector Cutoff Current I 10 A CBO (V = 250 V, I = 0) CB E Emitter Cutoff Current I 5.0 A EBO (V = 5.0 V, I = 0) EB C ON CHARACTERISTICS DC Current Gain h FE (I = 0.5 A, V = 5.0 V) 75 150 C CE (I = 1.0 A, V = 5.0 V) 75 150 C CE (I = 3.0 A, V = 5.0 V) 75 150 C CE CollectorEmitter Saturation Voltage V 1.0 V CE(sat) (I = 5.0 A, I = 0.5 A) C B BaseEmitter On Voltage V 1.2 V BE(on) (I = 5.0 A, V = 5.0 V) C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 30 MHz T (I = 1.0 A, V = 5.0 V, f = 1.0 MHz) C CE test Output Capacitance C 400 pF ob (V = 10 V, I = 0, f = 1.0 MHz) CB E test 160 100 140 1.0 ms 10 5.0 ms 120 10 ms 100 100 ms 1 80 DC 60 0.1 40 20 0 0.01 0 20 40 60 80 100 120 140 160 1 10 100 1000 T , CASE TEMPERATURE (C) C V , COLLECTOREMITTER VOLTAGE (V) CE Figure 1. Power Derating Figure 2. Safe Operating Area

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
989 Ship by Thu. 06 Mar to Wed. 12 Mar MOQ : 30 Multiples : 30	30 : USD 2.4125 120 : USD 2.1375 270 : USD 1.925 510 : USD 1.8 1020 : USD 1.675 2520 : USD 1.6625 5010 : USD 1.65

452 Ship by Thu. 13 Mar to Tue. 18 Mar MOQ : 1 Multiples : 1	1 : USD 4.4315 10 : USD 2.9785 30 : USD 2.2884 90 : USD 2.0069 510 : USD 1.88 990 : USD 1.824

77 Ship by Tue. 04 Mar to Thu. 06 Mar MOQ : 1 Multiples : 1	1 : USD 3.584 7 : USD 2.618 19 : USD 2.478 120 : USD 2.38

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Hot	NJW0302G TO-3PNB Bipolar (BJT) ROHS Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges. Stock: 763
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