NJW3281G (NPN) NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high NJW3281G (NPN) NJW1302G (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mAdc, I = 0) 250 C B Collector Cutoff Current I Adc CBO (V = 250 Vdc, I = 0) 50 CB E Emitter Cutoff Current I Adc EBO (V = 5 Vdc, I = 0) 5 EB C SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 1 s (nonrepetitive) 4 CE ON CHARACTERISTICS DC Current Gain h FE (I = 100 mAdc, V = 5 Vdc) 75 150 C CE (I = 1 Adc, V = 5 Vdc) 75 150 C CE (I = 3 Adc, V = 5 Vdc) 75 150 C CE (I = 5 Adc, V = 5 Vdc) 60 C CE (I = 8 Adc, V = 5 Vdc) 45 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8 Adc, I = 0.8 Adc) 0.4 0.6 C B BaseEmitter On Voltage V Vdc BE(on) (I = 8 Adc, V = 5 Vdc) 1.5 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 1 Adc, V = 5 Vdc, f = 1 MHz) 30 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1 MHz) 600 CB E test